Abstract
Pb(Zr0.52Ti0.48)O3 films were prepared on an r-plane sapphire substrate by laser ablation using the ArF excimer laser. This is the first report on the preparation of Pb(Zr0.52Ti0.48)O3 films by laser ablation. The composition of the deposited films was found to be fairly close to the composition of the target material for a wide range of the substrate temperature, 400–750°C. The substrate temperature greatly influences the crystal structure; a low substrate temperature produces a pyrochlore phase and a high substrate temperature (750°C) a perovskite phase.
References
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Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 22, 2005, 8:38 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 6, 2022, 8:18 a.m.) |
Indexed | 6 months ago (Feb. 21, 2025, 5:34 a.m.) |
Issued | 35 years, 7 months ago (Jan. 1, 1990) |
Published | 35 years, 7 months ago (Jan. 1, 1990) |
Published Print | 35 years, 7 months ago (Jan. 1, 1990) |
@article{Otsubo_1990, title={Preparation of Pb(Zn0.52Ti0.48)O3 Films by Laser Ablation}, volume={29}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.29.l133}, DOI={10.1143/jjap.29.l133}, number={1A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Otsubo, Shigeru and Maeda, Toshihiro and Minamikawa, Toshiharu and Yonezawa, Yasuto and Morimoto, Akiharu and Shimizu, Tatsuo}, year={1990}, month=jan, pages={L133} }