DOI: 10.1143/jjap.29.2265. Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO<sub>2</sub> Grown on Si

Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO2 Grown on Si

10.1143/jjap.29.2265

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Silicon dioxide films thermally grown on Si are irradiated with vacuum ultravioulet (VUV) photons (16.7 and 16.8 eV) as the films are supplied with bias voltages between -10 and 10 V. The resultant positive charges and E' centers in the films are studied by C-V (capacitance-voltage) and ESR measurements, respectively. The observed E' centers are distributed near the SiO2 surface, while the positive charges are localized at or very near the SiO2/Si interface. The positive charges and the E' centers show different characteristics in their bias and irradiation time dipendencies as well as in their depth distributions. These results indicate that the detected positive charges are different from holes trapped at oxygen vacancy sites between weak Si–Si bonds.

Bibliography

Yokogawa, K., Yajima, Y., Mizutani, T., Nishimatsu, S., & Suzuki, K. (1990). Positive Charges and Eâ Centers Formed by Vacuum Ultraviolet Radiation in SiO2 Grown on Si. Japanese Journal of Applied Physics, 29(10R), 2265.

Authors 5

Ken'etsu Yokogawa (first)
Yusuke Yajima (additional)
Tatsumi Mizutani (additional)
Shigeru Nishimatsu (additional)
Keizo Suzuki (additional)

References 13 Referenced 30

10.1063/1.323705 / J. Appl. Phys. (1977)
10.1143/JJAP.28.2172 / Jpn. J. Appl. Phys. (1989)
10.1109/TNS.1983.4333179 / IEEE Trans. Nucl. Sci. (1983)
10.1063/1.94566 / Appl. Phys. Lett. (1984)
10.1063/1.332937 / J. Appl. Phys. (1984)
10.1016/0038-1098(74)90840-0 / Solid State Commun. (1974)
10.1016/0168-583X(84)90113-7 / Nucl. Instrum. & methods (1984)
10.1109/TNS.1971.4326419 / IEEE Trans. Nucl. Sci. (1971)
10.1016/0038-1098(74)90840-0 / Solid State Commun. (1974)
{'key': '', 'first-page': '462', 'volume': 'NS-29', 'year': '1982', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1982)
10.1016/S0920-2307(86)80001-9 / Mat. Sci. Rep. (1986)
10.1109/16.8799 / IEEE Trans. Electron Devices (1988)
10.1063/1.98813 / Appl. Phys. Lett. (1987)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:46 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 7:44 a.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:34 a.m.)
Issued	34 years, 10 months ago (Oct. 1, 1990)
Published	34 years, 10 months ago (Oct. 1, 1990)
Published Print	34 years, 10 months ago (Oct. 1, 1990)

Funders 0

None

BibTeX

@article{Yokogawa_1990, title={Positive Charges and E’ Centers Formed by Vacuum Ultraviolet Radiation in SiO2 Grown on Si}, volume={29}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.29.2265}, DOI={10.1143/jjap.29.2265}, number={10R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Yokogawa, Ken’etsu and Yajima, Yusuke and Mizutani, Tatsumi and Nishimatsu, Shigeru and Suzuki, Keizo}, year={1990}, month=oct, pages={2265} }

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