DOI: 10.1143/jjap.28.l340. Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED

Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED

10.1143/jjap.28.l340

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Surface properties of (NH4)2S x -treated GaAs (100), (111)Ga and (1̄1̄1̄)As planes were studied by means of Auger electron spectroscopy (AES), low-energy electron energy loss spectroscopy (LEELS) and reflection high-energy electron diffraction (RHEED). We found that oxide-free and sulfur-terminated GaAs surfaces produced by the (NH4)2S x treatment provided the reduction of interface state density. Furthermore, comparison of various planes revealed that (i) sulfur atoms could combine with both Ga and As and (ii) bonding between Ga and S was stronger than that between As and S.

Bibliography

Oigawa, H., Fan, J.-F., Nannichi, Y., Ando, K., Saiki, K., & Koma, A. (1989). Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED. Japanese Journal of Applied Physics, 28(3A), L340.

Authors 6

Haruhiro Oigawa (first)
Jia-Fa Fan (additional)
Yasuo Nannichi (additional)
Koji Ando (additional)
Koichiro Saiki (additional)
Atsushi Koma (additional)

References 8 Referenced 89

10.1063/1.98877 / Appl. Phys. Lett. (1987)
10.1063/1.98415 / Appl. Phys. Lett. (1987)
{'year': '1988', 'key': ''} (1988)
10.1143/JJAP.27.L2367 / Jpn. J. Appl. Phys. (1988)
10.1143/JJAP.27.L1331 / Jpn. J. Appl. Phys. (1988)
10.1143/JJAP.27.L2125 / Jpn. J. Appl. Phys. (1988)
{'year': '1988', 'key': ''} (1988)
10.1063/1.92473 / Appl. Phys. Lett. (1981)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:30 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 9:14 a.m.)
Indexed	2 months ago (June 23, 2025, 8:46 a.m.)
Issued	36 years, 5 months ago (March 1, 1989)
Published	36 years, 5 months ago (March 1, 1989)
Published Print	36 years, 5 months ago (March 1, 1989)

Funders 0

None

BibTeX

@article{Oigawa_1989, title={Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED}, volume={28}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.28.l340}, DOI={10.1143/jjap.28.l340}, number={3A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Oigawa, Haruhiro and Fan, Jia-Fa and Nannichi, Yasuo and Ando, Koji and Saiki, Koichiro and Koma, Atsushi}, year={1989}, month=mar, pages={L340} }

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