Abstract
Diamond films have been obtained using magneto-microwave plasma assisted CVD at 0.1 Torr. The reaction gas is a CO/H2 mixture. By setting the ECR condition at the deposition area, a high density plasma (1×1011 cm-3) is obtained around the substrate. The discharge area is quite uniform in the pressure. Diamond films are obtained on positively biased substrates. As the reaction pressure becomes lower, the substrate temperature for the diamond formation tends to decrease. The films were evaluated by SEM imaging, electron diffraction and Raman spectroscopy.
References
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Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 27, 2005, 10:02 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 6, 2022, 9:17 a.m.) |
Indexed | 4 months, 4 weeks ago (March 31, 2025, 12:19 a.m.) |
Issued | 36 years, 6 months ago (Feb. 1, 1989) |
Published | 36 years, 6 months ago (Feb. 1, 1989) |
Published Print | 36 years, 6 months ago (Feb. 1, 1989) |
@article{Suzuki_1989, title={The Synthesis of Diamond Films at Lower Pressure and Lower Temperature Using Magneto-Microwave Plasma CVD}, volume={28}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.28.l281}, DOI={10.1143/jjap.28.l281}, number={2A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Suzuki, Jun-ichi and Kawarada, Hiroshi and Mar, King-Sheng and Wei, Jin and Yokota, Yoshihiro and Hiraki, Akio}, year={1989}, month=feb, pages={L281} }