Crossref journal-article
IOP Publishing
Japanese Journal of Applied Physics (266)
Abstract

By applying an rf co-sputtering technique, we have succeeded in producing Ge microcrystals in SiO2 thin films for which direct characterization by transmission electron microscopy is possible. As the size of the Ge microcrystals decreased from 6.5 to 2.7 nm, the optical extinction (absorption) spectra changed drastically. The structures corresponding to interband transitions in bulk Ge disappeared, and the onset of extinction shifted to higher energies. These spectral changes seem to arise from the three-dimensional confinement of electrons and holes in the microcrystals.

Bibliography

Hayashi, S., Fujii, M., & Yamamoto, K. (1989). Quantum Size Effects in Ge Microcrystals Embedded in SiO2 Thin Films. Japanese Journal of Applied Physics, 28(8A), L1464.

Authors 3
  1. Shinji Hayashi (first)
  2. Minoru Fujii (additional)
  3. Keiichi Yamamoto (additional)
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Dates
Type When
Created 20 years, 6 months ago (Feb. 22, 2005, 8:34 p.m.)
Deposited 2 years, 8 months ago (Dec. 6, 2022, 6:40 a.m.)
Indexed 1 month, 4 weeks ago (June 30, 2025, 7:27 a.m.)
Issued 36 years ago (Aug. 1, 1989)
Published 36 years ago (Aug. 1, 1989)
Published Print 36 years ago (Aug. 1, 1989)
Funders 0

None

@article{Hayashi_1989, title={Quantum Size Effects in Ge Microcrystals Embedded in SiO2 Thin Films}, volume={28}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.28.l1464}, DOI={10.1143/jjap.28.l1464}, number={8A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Hayashi, Shinji and Fujii, Minoru and Yamamoto, Keiichi}, year={1989}, month=aug, pages={L1464} }