Abstract
Epitaxial films of the solid solution Ga1-x In x N (up to X=0.42) have been fabricated on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at 500°C. The properties of the films have been studied by the reflection high-energy electron diffraction technique, X-ray diffraction, and electrical and optical measurements. The fundamental absorption edge of the film decreases linearly with composition (up to X=0.42) from 3.20 eV to 2.01 eV at room temperature.
References
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Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 22, 2005, 8:34 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 7, 2022, 6:04 a.m.) |
Indexed | 4 months, 1 week ago (April 20, 2025, 12:30 a.m.) |
Issued | 36 years ago (Aug. 1, 1989) |
Published | 36 years ago (Aug. 1, 1989) |
Published Print | 36 years ago (Aug. 1, 1989) |
@article{Nagatomo_1989, title={Properties of Ga1-xInxN Films Prepared by MOVPE}, volume={28}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.28.l1334}, DOI={10.1143/jjap.28.l1334}, number={8A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nagatomo, Takao and Kuboyama, Takeshi and Minamino, Hiroyuki and Omoto, Osamu}, year={1989}, month=aug, pages={L1334} }