Crossref journal-article
IOP Publishing
Japanese Journal of Applied Physics (266)
Abstract

Epitaxial films of the solid solution Ga1-x In x N (up to X=0.42) have been fabricated on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at 500°C. The properties of the films have been studied by the reflection high-energy electron diffraction technique, X-ray diffraction, and electrical and optical measurements. The fundamental absorption edge of the film decreases linearly with composition (up to X=0.42) from 3.20 eV to 2.01 eV at room temperature.

Bibliography

Nagatomo, T., Kuboyama, T., Minamino, H., & Omoto, O. (1989). Properties of Ga1-xInxN Films Prepared by MOVPE. Japanese Journal of Applied Physics, 28(8A), L1334.

Authors 4
  1. Takao Nagatomo (first)
  2. Takeshi Kuboyama (additional)
  3. Hiroyuki Minamino (additional)
  4. Osamu Omoto (additional)
References 6 Referenced 116
  1. 10.1063/1.1654648 / Appl. Phys. Lett. (1973)
  2. 10.1063/1.89424 / Appl. Phys. Lett. (1977)
  3. 10.1063/1.334277 / J. Appl. Phys. (1984)
  4. 10.1063/1.322064 / J. Appl. Phys. (1975)
  5. 10.1016/0038-1098(72)90474-7 / Solid State Commun. (1972)
  6. {'key': '', 'first-page': '292', 'volume': 'E71', 'year': '1988', 'journal-title': 'Trans. IEICE: Jpn.'} / Trans. IEICE: Jpn. (1988)
Dates
Type When
Created 20 years, 6 months ago (Feb. 22, 2005, 8:34 p.m.)
Deposited 2 years, 8 months ago (Dec. 7, 2022, 6:04 a.m.)
Indexed 4 months, 1 week ago (April 20, 2025, 12:30 a.m.)
Issued 36 years ago (Aug. 1, 1989)
Published 36 years ago (Aug. 1, 1989)
Published Print 36 years ago (Aug. 1, 1989)
Funders 0

None

@article{Nagatomo_1989, title={Properties of Ga1-xInxN Films Prepared by MOVPE}, volume={28}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.28.l1334}, DOI={10.1143/jjap.28.l1334}, number={8A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nagatomo, Takao and Kuboyama, Takeshi and Minamino, Hiroyuki and Omoto, Osamu}, year={1989}, month=aug, pages={L1334} }