DOI: 10.1143/jjap.28.841. Silicon Selective Epitaxial Growth and Electrical Properties of Epi/Sidewall Interfaces

Silicon Selective Epitaxial Growth and Electrical Properties of Epi/Sidewall Interfaces

10.1143/jjap.28.841

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Facet formation and stacking fault generation in silicon selective epitaxial growth are studied. On selective epilayer surfaces, a {311} facet and a {111} microfacet are formed on a {100} and a {111} substrate, respectively. In selective epilayers, stacking faults are observed adjacent to the sidewall Facet-free and stacking-fault-free selective epilayers are obtained using the <100>-orinted sidewall at low growth temperatures. These results are explained by an epitaxial growth model at hollow bridge sites. Electrical properties of the interfaces between the selective epilayer and the sidewall are also studied. The <100>-oriented SiO2 sidewall has better electrical characteristics than other sidewall orientations and sidewall materials.

Bibliography

Ishitani, A., Kitajima, H., Endo, N., & Kasai, N. (1989). Silicon Selective Epitaxial Growth and Electrical Properties of Epi/Sidewall Interfaces. Japanese Journal of Applied Physics, 28(5R), 841.

Authors 4

Akihiko Ishitani (first)
Hiroshi Kitajima (additional)
Nobuhiro Endo (additional)
Naoki Kasai (additional)

References 16 Referenced 23

10.1109/T-ED.1984.21701 / IEEE Trans. Electron Devices (1984)
10.1109/T-ED.1986.22725 / IEEE Trans. Electron Devices (1986)
{'year': '1985', 'key': ''} (1985)
{'year': '1987', 'key': ''} (1987)
10.1143/JJAP.21.L564 / Jpn. J. Appl. Phys. (1982)
10.1143/JJAP.22.L783 / Jpn. J. Appl. Phys. (1983)
{'year': '1986', 'key': ''} (1986)
10.1143/JJAP.23.L391 / Jpn. J. Appl. Phys. (1984)
10.1143/JJAP.24.1267 / Jpn. J. Appl. Phys. (1985)
10.1016/0167-9317(86)90003-1 / Microelectron. Eng. (1986)
10.1063/1.99412 / Appl. Phys. Lett. (1988)
10.1063/1.340250 / J. Appl. Phys. (1988)
10.1149/1.2115593 / J. Electrochem. Soc. (1984)
10.1016/0022-0248(83)90164-1 / J. Cryst. Growth (1983)
10.1109/T-ED.1984.21781 / IEEE Trans. Electron Devices (1984)
{'year': '1987', 'key': ''} (1987)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:32 p.m.)
Deposited	2 years, 8 months ago (Dec. 5, 2022, 2:41 p.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:34 a.m.)
Issued	36 years, 3 months ago (May 1, 1989)
Published	36 years, 3 months ago (May 1, 1989)
Published Print	36 years, 3 months ago (May 1, 1989)

Funders 0

None

BibTeX

@article{Ishitani_1989, title={Silicon Selective Epitaxial Growth and Electrical Properties of Epi/Sidewall Interfaces}, volume={28}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.28.841}, DOI={10.1143/jjap.28.841}, number={5R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Ishitani, Akihiko and Kitajima, Hiroshi and Endo, Nobuhiro and Kasai, Naoki}, year={1989}, month=may, pages={841} }

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