DOI: 10.1143/jjap.28.2172. Radiation Damage in SiO<sub>2</sub>/Si Induced by VUV Photons

Radiation Damage in SiO2/Si Induced by VUV Photons

10.1143/jjap.28.2172

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Quantitative measurements of radiation damage in SiO2/Si systems induced by VUV photons generated in various microwave plasmas are performed. The SiO2/Si system is irradiated by monochromatic VUV photons, and its flat-band voltage shift (Δ V FB) is measured by the C-V method. The number of effective positive charges generated in the SiO2 layer by a single VUV photon (R f) is evaluated from the Δ V FB and the total VUV dose. A VUV photon is found to generate effective positive charges in SiO2 when its energy (E p) is larger than the SiO2 band gap energy (E g=8.8 eV). The value of R f is on the order of 10-3∼10-2 and increases in proportional to the energy difference between E p and E g . A model is proposed to explain these phenomena. The model states that a VUV photon with energy E p(>E g) generates an electron-hole pair in the SiO2 and the holes that are not recombined are trapped in the energy state near the SiO2/Si interface.

Bibliography

Yunogami, T., Mizutani, T., Suzuki, K., & Nishimatsu, S. (1989). Radiation Damage in SiO2/Si Induced by VUV Photons. Japanese Journal of Applied Physics, 28(10R), 2172.

Authors 4

Takashi Yunogami (first)
Tatsumi Mizutani (additional)
Keizo Suzuki (additional)
Shigeru Nishimatsu (additional)

References 18 Referenced 110

10.1063/1.95243 / Appl. Phys. Lett. (1984)
10.1149/1.2100351 / J. Electrochem. Soc. (1987)
10.1016/0169-4332(89)90927-6 / Appl. Surf. Sci. (1989)
{'key': '', 'first-page': '1417', 'volume': 'A6-3', 'year': '1987', 'journal-title': 'J. Vac. Sci. Technol.'} / J. Vac. Sci. Technol. (1987)
10.1557/PROC-128-605 / Mater. Res. Soc. Symp. Proc. (1989)
{'key': ''}
{'year': '1967', 'key': ''} (1967)
10.1109/TNS.1971.4326419 / IEEE Trans. Nucl. Sci. (1971)
10.1109/TNS.1981.4335689 / IEEE Trans. Nucl. Sci. (1981)
10.1109/TNS.1986.4334600 / IEEE Trans. Nucl. Sci. (1986)
{'key': '', 'first-page': '2399', 'volume': '4', 'year': '1987', 'journal-title': 'Proc. 8th Int. Symp. Plasma Chemistry'} / Proc. 8th Int. Symp. Plasma Chemistry (1987)
{'year': '1967', 'key': ''} (1967)
{'year': '1967', 'key': ''} (1967)
10.1364/JOSA.54.000747 / J. Opt. Sci. Am. (1964)
{'key': '', 'first-page': '9', 'volume': '12', 'year': '1963', 'journal-title': 'Sci. Light'} / Sci. Light (1963)
10.1063/1.88104 / Appl. Phys. Lett. (1975)
10.1063/1.322730 / J. Appl. Phys. (1976)
10.1063/1.89983 / Appl. Phys. Lett. (1978)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:36 p.m.)
Deposited	2 years, 8 months ago (Dec. 5, 2022, 2:22 p.m.)
Indexed	3 weeks, 6 days ago (Aug. 6, 2025, 8:59 a.m.)
Issued	35 years, 11 months ago (Oct. 1, 1989)
Published	35 years, 11 months ago (Oct. 1, 1989)
Published Print	35 years, 11 months ago (Oct. 1, 1989)

Funders 0

None

BibTeX

@article{Yunogami_1989, title={Radiation Damage in SiO2/Si Induced by VUV Photons}, volume={28}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.28.2172}, DOI={10.1143/jjap.28.2172}, number={10R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Yunogami, Takashi and Mizutani, Tatsumi and Suzuki, Keizo and Nishimatsu, Shigeru}, year={1989}, month=oct, pages={2172} }

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