Abstract
The reaction kinetics describing the CH3OH decomposition in CVD conditions are studied by the comparison between the measured and the simulated time-varying gas concentrations. The chemical kinetic calculation for the deposition of the diamondlike film by the conventional tungsten filament method is carried out by making use of a simplified one-dimensional model, and it is shown that CH3is the mainC-containing radical. The overall sticking probability of CH3is roughly estimated as β(CH3)=10-2for the silicon substrate heated to 1000 K.
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Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 22, 2005, 8:32 p.m.) |
Deposited | 1 year, 7 months ago (Jan. 23, 2024, 12:48 p.m.) |
Indexed | 2 months, 1 week ago (June 24, 2025, 12:29 p.m.) |
Issued | 36 years, 3 months ago (June 1, 1989) |
Published | 36 years, 3 months ago (June 1, 1989) |
Published Print | 36 years, 3 months ago (June 1, 1989) |
@article{Matsui_1989, title={Chemical Kinetic Analysis on the Growth Mechanism of Diamondlike Films from a CH3OH–H2Mixture}, volume={28}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.28.1023}, DOI={10.1143/jjap.28.1023}, number={6R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Matsui, Yasuji and Sahara, Mieko}, year={1989}, month=jun, pages={1023} }