DOI: 10.1143/jjap.27.l434. Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition

Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition

10.1143/jjap.27.l434

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Non-doped 3C-SiC epilayers having mobility higher than 750 cm2/(V ·s) at room temperature and 3000 cm2/(V ·s) around 66 K were obtained for the first time, using large size (60×70 mm2) Si substrates. The conditions for obtaining such high-mobility epilayers are discussed in terms of the distribution of the electrical properties over the epilayers and their substrate size dependence.

Bibliography

Shinohara, M., Yamanaka, M., Daimon, H., Sakuma, E., Okumura, H., Misawa, S., Endo, K., & Yoshida, S. (1988). Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition. Japanese Journal of Applied Physics, 27(3A), L434.

Authors 8

Mikiya Shinohara (first)
Mitsugu Yamanaka (additional)
Hiroshi Daimon (additional)
Eiichiro Sakuma (additional)
Hajime Okumura (additional)
Shunji Misawa (additional)
Kazuhiro Endo (additional)
Sadafumi Yoshida (additional)

References 7 Referenced 49

10.1063/1.93970 / Appl. Phys. Lett. (1983)
10.1063/1.337075 / J. Appl. Phys. (1986)
10.1063/1.97048 / Appl. Phys. Lett. (1986)
10.1063/1.97112 / Appl. Phys. Lett. (1986)
{'key': '', 'first-page': '1533', 'volume': '50', 'year': '1987', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1987)
10.1063/1.338211 / J. Appl. Phys. (1987)
10.1063/1.1707837 / J. Appl. Phys. (1966)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:20 p.m.)
Deposited	2 years, 8 months ago (Dec. 5, 2022, 3:01 p.m.)
Indexed	4 weeks ago (Aug. 2, 2025, 1:21 a.m.)
Issued	37 years, 5 months ago (March 1, 1988)
Published	37 years, 5 months ago (March 1, 1988)
Published Print	37 years, 5 months ago (March 1, 1988)

Funders 0

None

BibTeX

@article{Shinohara_1988, title={Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition}, volume={27}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.27.l434}, DOI={10.1143/jjap.27.l434}, number={3A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Shinohara, Mikiya and Yamanaka, Mitsugu and Daimon, Hiroshi and Sakuma, Eiichiro and Okumura, Hajime and Misawa, Shunji and Endo, Kazuhiro and Yoshida, Sadafumi}, year={1988}, month=mar, pages={L434} }

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