DOI: 10.1143/jjap.27.l1414. Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon: Determination by Electron Spin Resonance Measurements

Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon: Determination by Electron Spin Resonance Measurements

10.1143/jjap.27.l1414

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

It is demonstrated that a deep level of a paramagnetic off-center substitutional N can be determined by electron spin resonance (ESR) measurements of the peak-to-peak derivative linewidth Δ H msl over a wide temperature region from 150 to 550 K. The temperature dependence of Δ H msl observed above ∼330 K is interpreted in terms of one type of motional broadening. According to this model, we obtain an energy level of 0.33±0.02 eV below the conduction band and the electron capture cross section σ0 of 1.0×10-15 cm2, which are in agreement with one of the levels obtained by deep-level transient spectroscopy (DLTS).

Bibliography

Murakami, K., Kuribayashi, H., & Masuda, K. (1988). Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon: Determination by Electron Spin Resonance Measurements. Japanese Journal of Applied Physics, 27(8A), L1414.

Authors 3

Kouichi Murakami (first)
Hitoshi Kuribayashi (additional)
Kohzoh Masuda (additional)

References 10 Referenced 13

{'volume': '59', 'year': '1986', 'key': ''} (1986)
10.1103/PhysRev.121.1001 / Phys. Rev. (1961)
10.1103/PhysRevB.26.6040 / Phys. Rev. B (1982)
{'volume': '38', 'journal-title': 'Phys. Rev. B.', 'key': ''} / Phys. Rev. B.
{'year': '1985', 'key': ''} (1985)
10.1063/1.338351 / J. Appl. Phys. (1987)
10.1143/JPSJ.9.316 / J. Phys. Soc. Jpn. (1954)
{'key': ''}
10.1063/1.89382 / Appl. Phys. Lett. (1977)
{'year': '1973', 'key': ''} (1973)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:24 p.m.)
Deposited	2 years, 8 months ago (Dec. 5, 2022, 3:13 p.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:34 a.m.)
Issued	37 years ago (Aug. 1, 1988)
Published	37 years ago (Aug. 1, 1988)
Published Print	37 years ago (Aug. 1, 1988)

Funders 0

None

BibTeX

@article{Murakami_1988, title={Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon: Determination by Electron Spin Resonance Measurements}, volume={27}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.27.l1414}, DOI={10.1143/jjap.27.l1414}, number={8A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Murakami, Kouichi and Kuribayashi, Hitoshi and Masuda, Kohzoh}, year={1988}, month=aug, pages={L1414} }

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