DOI: 10.1143/jjap.26.l951. Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250°C

Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250°C

10.1143/jjap.26.l951

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

A new technique for the epitaxial growth of silicon has been developed using plasma chemical vapor deposition. Epitaxial thin films were grown on (100) Si substrates at 250°C from a gas mixture of SiH4, SiH2F2, and H2 by glow discharge decomposition. Reflective high-energy electron diffraction (RHEED) measurements showed that the surface of the epitaxial film obtained was smooth. The epitaxial films have been characterized by high resolution transmission electron microscopy (HRTEM) and secondary ion mass spectroscopy (SIMS).

Bibliography

Nagamine, K., Yamada, A., Konagai, M., & Takahashi, K. (1987). Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250Â°C. Japanese Journal of Applied Physics, 26(6A), L951.

Authors 4

Kunihiro Nagamine (first)
Akira Yamada (additional)
Makoto Konagai (additional)
Kiyoshi Takahashi (additional)

References 9 Referenced 30

10.1149/1.2128792 / J. Electrochem. Soc. (1979)
10.1149/1.2131515 / J. Electrochem. Soc. (1980)
10.1063/1.335418 / J. Appl. Phys. (1985)
10.1143/JJAP.7.1332 / Jpn. J. Appl. Phys. (1968)
10.1149/1.2411228 / J. Electrochem. Soc. (1968)
{'key': ''}
10.1063/1.97626 / Appl. Phys. Lett. (1986)
{'year': '1986', 'key': ''} (1986)
{'key': '', 'first-page': '767', 'volume': '59 & 60', 'year': '1983', 'journal-title': 'Proceeding of the 10th International Conference on Amorphous and Liquid Semiconductors, J. Non-Cryst. Solids'} / Proceeding of the 10th International Conference on Amorphous and Liquid Semiconductors, J. Non-Cryst. Solids (1983)

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 12:35 a.m.)
Deposited	2 years, 8 months ago (Dec. 5, 2022, 1:05 p.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:35 a.m.)
Issued	38 years, 3 months ago (June 1, 1987)
Published	38 years, 3 months ago (June 1, 1987)
Published Print	38 years, 3 months ago (June 1, 1987)

Funders 0

None

BibTeX

@article{Nagamine_1987, title={Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250°C}, volume={26}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.26.l951}, DOI={10.1143/jjap.26.l951}, number={6A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nagamine, Kunihiro and Yamada, Akira and Konagai, Makoto and Takahashi, Kiyoshi}, year={1987}, month=jun, pages={L951} }

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