Abstract
Superconducting Sr x La2-x CuO4-y thin films were deposited on heated substrate by sputtering. Crystalline films were obtained by setting substrate temperature T c above 450°C. In this process, there were 2 peculiar features as follows; (1) deviation of film composition from that of target (such as Cu deficiency and excess of oxygen) and (2) change of target surface with an increase of the number of the deposition. Films of almost single phase of K2NiF4 structure were obtained by adjusting film composition and T s above 550°C. Tc onset up to 42 K was obtained for as-deposited films, though its reproducibility was limited by the change of target.
References
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Dates
Type | When |
---|---|
Created | 19 years, 9 months ago (Nov. 4, 2005, 12:35 a.m.) |
Deposited | 2 years, 8 months ago (Dec. 5, 2022, 12:41 p.m.) |
Indexed | 6 months, 1 week ago (Feb. 21, 2025, 5:36 a.m.) |
Issued | 38 years, 4 months ago (April 1, 1987) |
Published | 38 years, 4 months ago (April 1, 1987) |
Published Print | 38 years, 4 months ago (April 1, 1987) |
@article{Terada_1987, title={Deposition of SrxLa2-xCuO4-y Thin Films by Sputtering}, volume={26}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.26.l508}, DOI={10.1143/jjap.26.l508}, number={4A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Terada, Norio and Ihara, Hideo and Hirabayashi, Masayuki and Senzaki, Kiyoshi and Kimura, Youichi and Murata, Keizo and Tokumoto, Madoka}, year={1987}, month=apr, pages={L508} }