Crossref journal-article
IOP Publishing
Japanese Journal of Applied Physics (266)
Abstract

We performed extended X-ray absorption fine structure measurements on Al0.38Ga0.62As:Se in order to investigate the lattice relaxation accompanying the existence of the deep level. The local structure of Se donor impurities was observed by monitoring the Se Kαfluorescence yield. A small glancing angle arrangement was applied to suppress the effects of both Ga and As Kαfluorescence X-rays. The nearest-neighbor distances around Se were not influenced by the existence of the deep level.

Bibliography

Kitano, T., & Mizuta, M. (1987). Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities. Japanese Journal of Applied Physics, 26(11A), L1806.

Authors 2
  1. Tomohisa Kitano (first)
  2. Masashi Mizuta (additional)
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Dates
Type When
Created 19 years, 9 months ago (Nov. 4, 2005, 12:40 a.m.)
Deposited 1 year, 7 months ago (Jan. 31, 2024, 7:19 a.m.)
Indexed 6 months, 1 week ago (Feb. 21, 2025, 5:36 a.m.)
Issued 37 years, 10 months ago (Nov. 1, 1987)
Published 37 years, 10 months ago (Nov. 1, 1987)
Published Print 37 years, 10 months ago (Nov. 1, 1987)
Funders 0

None

@article{Kitano_1987, title={Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities}, volume={26}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.26.l1806}, DOI={10.1143/jjap.26.l1806}, number={11A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kitano, Tomohisa and Mizuta, Masashi}, year={1987}, month=nov, pages={L1806} }