Abstract
The fine compositional fluctuation in a GaAs/Al x Ga1-x As superstructure grown by metal-organic chemical vapor deposition (MOCVD) was evaluated by using the composition analysis by thickness-fringe (CAT) method. A sinusoidally oscillating Al composition in the growth direction was observed to have a period of 1∼4 nm and in the range x=0.15 to 0.5. The CAT method was successfully applied to measure such fine compositional fluctuations with a high spacial resolution.
References
5
Referenced
14
10.1143/JJAP.24.L905
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Dates
Type | When |
---|---|
Created | 19 years, 9 months ago (Nov. 4, 2005, 12:31 a.m.) |
Deposited | 2 years, 8 months ago (Dec. 5, 2022, 2:13 p.m.) |
Indexed | 6 months, 1 week ago (Feb. 21, 2025, 5:35 a.m.) |
Issued | 38 years, 3 months ago (May 1, 1987) |
Published | 38 years, 3 months ago (May 1, 1987) |
Published Print | 38 years, 3 months ago (May 1, 1987) |
@article{Kakibayashi_1987, title={Observation of Fine Compositional Fluctuation in GaAs/AIxGa1-xAs Superstructure Using Composition Analysis by Thickness-Fringe (CAT) Method}, volume={26}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.26.770}, DOI={10.1143/jjap.26.770}, number={5R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kakibayashi, Hiroshi and Nagata, Fumio and Ono, Yuichi}, year={1987}, month=may, pages={770} }