DOI: 10.1143/jjap.25.l648. Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0≦x≦1) Heterostructures

Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0≦x≦1) Heterostructures

10.1143/jjap.25.l648

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

In0.52Ga0.48As/In0.52(Ga1-x Al x )0.48As/In0.52Ga0.48As potential barrier structures (x=0.25, 0.5, 0.75, 1), lattice-matched to InP, were grown by MBE using a pulsed molecular beam method. The conduction band edge discontinuity, ΔE c(x) between In0.52Ga0.48As and In0.52(Ga1-x Al x )0.48As, was obtained for the first time by measuring the current-voltage characteristics through the barrier structure as a function of temperature in the range of 77–300 K. It was confirmed that the conduction band edge discontinuity varies linearly with Al composition, x, (ΔE c(x)=0.53x(eV) for 0≦x≦1) and is proportional to the band gap difference, ΔE g(x), (ΔE c(x)=0.72ΔE g(x)(eV) for 0≦x≦1).

Bibliography

Sugiyama, Y., Inata, T., Fujii, T., Nakata, Y., Muto, S., & Hiyamizu, S. (1986). Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0â¦xâ¦1) Heterostructures. Japanese Journal of Applied Physics, 25(8A), L648.

Authors 6

Yoshihiro Sugiyama (first)
Tsuguo Inata (additional)
Toshio Fujii (additional)
Yoshiaki Nakata (additional)
Shunichi Muto (additional)
Satoshi Hiyamizu (additional)

References 10 Referenced 75

10.1007/BF02652891 / J. Electron. Mater. (1980)
10.1016/0022-0248(85)90016-8 / J. Cryst. Growth (1985)
10.1149/1.2131669 / J. Electrochem. Soc. (1985)
10.1049/el:19830157 / Electon. Lett. (1983)
10.1002/pssa.2210720125 / Phys. Status Solidi a (1982)
10.1143/JJAP.25.L254 / Jpn. J. Appl. Phys. (1986)
10.1143/JJAP.25.L598 / Jpn. J. Appl. Phys. (1986)
{'year': '1981', 'key': ''} (1981)
10.1063/1.94149 / Appl. Phys. Lett. (1983)
10.1063/1.333348 / J. Appl. Phys. (1984)

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 12:44 a.m.)
Deposited	2 years, 8 months ago (Dec. 5, 2022, 1:56 p.m.)
Indexed	4 months, 3 weeks ago (March 31, 2025, 4:43 p.m.)
Issued	39 years ago (Aug. 1, 1986)
Published	39 years ago (Aug. 1, 1986)
Published Print	39 years ago (Aug. 1, 1986)

Funders 0

None

BibTeX

@article{Sugiyama_1986, title={Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0≦x≦1) Heterostructures}, volume={25}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.25.l648}, DOI={10.1143/jjap.25.l648}, number={8A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Sugiyama, Yoshihiro and Inata, Tsuguo and Fujii, Toshio and Nakata, Yoshiaki and Muto, Shunichi and Hiyamizu, Satoshi}, year={1986}, month=aug, pages={L648} }

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