DOI: 10.1143/jjap.24.l928. A Model for DX Centers: Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys

A Model for DX Centers: Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys

10.1143/jjap.24.l928

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

A bond reconstruction model for DX centers is proposed. The model assumes the inherent instability in the sp3 covalent bonding between donor and host atoms in the indirect gap regime. This instability is due to the localization of donor bound electrons. The instability results in bond reconstruction which is governed by local host atom configurations around the donor atoms. The DX centers are resultant self-generated donor vacancy pairs.

Bibliography

Kobayashi, K. L. I., Uchida, Y., & Nakashima, H. (1985). A Model for DX Centers: Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys. Japanese Journal of Applied Physics, 24(12A), L928.

Authors 3

Keisuke L. I. Kobayashi (first)
Yoko Uchida (additional)
Hisao Nakashima (additional)

References 10 Referenced 40

{'volume': 'B19', 'journal-title': 'Phys. Rev.', 'year': '1979', 'key': ''} / Phys. Rev. (1979)
{'key': ''}
{'volume': '23', 'journal-title': 'J. J. Appl. Phys.', 'key': ''} / J. J. Appl. Phys.
10.1143/JJAP.24.L408 / Jpn. J. Appl. Phys.
{'volume': 'B2', 'journal-title': 'J. Vac. Sci. Technol.', 'key': ''} / J. Vac. Sci. Technol.
{'volume': '39', 'journal-title': 'J. Appl. Phys.', 'key': ''} / J. Appl. Phys.
{'volume': '43', 'journal-title': 'Proc. 14th Int. Conf. Phys. Semicond., Edinburgh, 1978, Inst. Phys. Conf. Ser. No.', 'key': ''} / Proc. 14th Int. Conf. Phys. Semicond., Edinburgh, 1978, Inst. Phys. Conf. Ser. No.
10.1143/JJAP.24.L143 / Jpn. J. Appl. Phys.
{'volume': '49', 'journal-title': 'Proc. 15th Int. Conf. Phys. Semicond., Kyoto 1980, J. Phys. Soc. Japan', 'key': ''} / Proc. 15th Int. Conf. Phys. Semicond., Kyoto 1980, J. Phys. Soc. Japan
{'volume': '22', 'key': ''}

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 12:52 a.m.)
Deposited	2 years, 8 months ago (Dec. 5, 2022, 10:34 a.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:36 a.m.)
Issued	39 years, 9 months ago (Dec. 1, 1985)
Published	39 years, 9 months ago (Dec. 1, 1985)
Published Print	39 years, 9 months ago (Dec. 1, 1985)

Funders 0

None

BibTeX

@article{Kobayashi_1985, title={A Model for DX Centers: Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys}, volume={24}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.24.l928}, DOI={10.1143/jjap.24.l928}, number={12A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kobayashi, Keisuke L. I. and Uchida, Yoko and Nakashima, Hisao}, year={1985}, month=dec, pages={L928} }

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