DOI: 10.1143/jjap.23.l919. Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate

Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate

10.1143/jjap.23.l919

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

GaAs MESFET ring oscillators were successfully fabricated on silicon substrate. GaAs epitaxial layers were grown directly by MOCVD on Si(100) substrate. A typical transconductance of 200 mS/mm was observed for the FET of 1.0 µm × 10 µm gate. A minimum propagation delay time of 51 ps/gate at a power dissipation of 1.1 mW/gate was observed for an E/D gate ring oscillator with gate length of 1.0 µm.

Bibliography

Nonaka, T., Akiyama, M., Kawarada, Y., & Kaminishi, K. (1984). Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate. Japanese Journal of Applied Physics, 23(12A), L919.

Authors 4

Toshio Nonaka (first)
Masahiro Akiyama (additional)
Yoshihiro Kawarada (additional)
Katsuzo Kaminishi (additional)

References 11 Referenced 53

10.1063/1.91751 / Appl. Phys. Lett. (1980)
10.1063/1.95170 / Appl. Phys. Lett. (1984)
10.1109/EDL.1981.25386 / IEEE Electron Device Lett. (1981)
10.1063/1.94613 / Appl. Phys. Lett. (1984)
{'year': '1984', 'key': ''} (1984)
10.1109/EDL.1984.25889 / IEEE Electron Device Lett. (1984)
{'key': ''}
10.1063/1.94673 / Appl. Phys. Lett. (1984)
10.1143/JJAP.23.L843 / Jpn. J. Appl. Phys. Lett. (1984)
10.1016/0022-0248(84)90394-4 / J. Crys. Growth. (1984)
{'key': ''}

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 12:56 a.m.)
Deposited	2 years, 8 months ago (Dec. 5, 2022, 9:44 a.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:35 a.m.)
Issued	40 years, 8 months ago (Dec. 1, 1984)
Published	40 years, 8 months ago (Dec. 1, 1984)
Published Print	40 years, 8 months ago (Dec. 1, 1984)

Funders 0

None

BibTeX

@article{Nonaka_1984, title={Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate}, volume={23}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.23.l919}, DOI={10.1143/jjap.23.l919}, number={12A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nonaka, Toshio and Akiyama, Masahiro and Kawarada, Yoshihiro and Kaminishi, Katsuzo}, year={1984}, month=dec, pages={L919} }

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