DOI: 10.1143/jjap.23.l623. Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing

Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing

10.1143/jjap.23.l623

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Effect of Si-doping levels and annealing temperature on disordering of 150-Å AlAs/150-Å GaAs superlattices is studied. The doping level of 4×1018 cm-3 cause disorder for 800°C, 2 h annealing, while the doping level of 1×1018 cm-3 does not induce disorder on this annealing condition. A superlattice which is doped with 1×1019 Si cm-3 disintegrates after 650°C, 2 h annealing and the diffusion coefficient of Al–Ga interdiffusion is estimated to be 3×10-17 cm2s-1. For 800°C, 2 h annealing the two undoped AlAs/GaAs layers adjacent to the doped region are disordered by Si diffusion.

Bibliography

Kawabe, M., Matsuura, N., Shimizu, N., Hasegawa, F., & Nannichi, Y. (1984). Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing. Japanese Journal of Applied Physics, 23(8A), L623.

Authors 5

Mitsuo Kawabe (first)
Nobuyuki Matsuura (additional)
Norisato Shimizu (additional)
Fumio Hasegawa (additional)
Yasuo Nannichi (additional)

References 8 Referenced 59

10.1063/1.89026 / Appl. Phys. Lett. (1976)
10.1063/1.327310 / J. Appl. Phys. (1980)
10.1063/1.92159 / Appl. Phys. Lett. (1981)
10.1063/1.92942 / Appl. Phys. Lett. (1982)
10.1063/1.330012 / J. Appl. Phys. (1981)
{'year': '1975', 'key': ''} (1975)
10.1063/1.89386 / Appl. Phys. Lett. (1977)
10.1063/1.92562 / Appl. Phys. Lett. (1981)

Dates

Type	When
Created	19 years, 10 months ago (Nov. 4, 2005, 12:56 a.m.)
Deposited	2 years, 9 months ago (Dec. 5, 2022, 10:33 a.m.)
Indexed	6 months, 2 weeks ago (Feb. 21, 2025, 5:36 a.m.)
Issued	41 years, 1 month ago (Aug. 1, 1984)
Published	41 years, 1 month ago (Aug. 1, 1984)
Published Print	41 years, 1 month ago (Aug. 1, 1984)

Funders 0

None

BibTeX

@article{Kawabe_1984, title={Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing}, volume={23}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.23.l623}, DOI={10.1143/jjap.23.l623}, number={8A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kawabe, Mitsuo and Matsuura, Nobuyuki and Shimizu, Norisato and Hasegawa, Fumio and Nannichi, Yasuo}, year={1984}, month=aug, pages={L623} }

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  "abstract": "<jats:p> \n Effect of Si-doping levels and annealing temperature on disordering of 150-\u00c5 AlAs/150-\u00c5 GaAs superlattices is studied. The doping level of 4\u00d710<jats:sup>18</jats:sup> cm<jats:sup>-3</jats:sup> cause disorder for 800\u00b0C, 2 h annealing, while the doping level of 1\u00d710<jats:sup>18</jats:sup> cm<jats:sup>-3</jats:sup> does not induce disorder on this annealing condition. A superlattice which is doped with 1\u00d710<jats:sup>19</jats:sup> Si cm<jats:sup>-3</jats:sup> disintegrates after 650\u00b0C, 2 h annealing and the diffusion coefficient of Al\u2013Ga interdiffusion is estimated to be 3\u00d710<jats:sup>-17</jats:sup> cm<jats:sup>2</jats:sup>s<jats:sup>-1</jats:sup>. For 800\u00b0C, 2 h annealing the two undoped AlAs/GaAs layers adjacent to the doped region are disordered by Si diffusion. \n </jats:p>",
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