DOI: 10.1143/jjap.22.l213. Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs

Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs

10.1143/jjap.22.l213

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

It is demonstrated that a high electric field has large effects on the electron distribution and mobility in selectively doped GaAs/n-GaAs heterostructures. An increase of electron density in the AlGaAs layer has been found in the analysis of pulsed Hall effect and SdH oscillations at 4.2 K. At high fields, the mobility of two dimensional (2D) electrons has become slightly higher than the average mobility obtained by the pulsed Hall measurement. The velocity of 2D electrons reaches 3.8×107 cm/s at 4.2 K.

Bibliography

Inoue, M., Inayama, M., Hiyamizu, S., & Inuishi, Y. (1983). Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs. Japanese Journal of Applied Physics, 22(4A), L213.

Authors 4

Masataka Inoue (first)
Minoru Inayama (additional)
Satoshi Hiyamizu (additional)
Yoshio Inuishi (additional)

References 12 Referenced 19

10.1103/PhysRevLett.38.1489 / Phys. Rev. Lett. (1977)
10.1143/JJAP.19.L225 / Jpn. J. Appl. Phys. (1980)
10.1063/1.92088 / Appl. Phys. Lett. (1980)
10.1063/1.90457 / Appl. Phys. Lett. (1978)
{'key': ''}
{'key': ''}
10.1143/JJAP.22S1.357 / Proc. Int. Conf. Solid State Devices, Tokyo, 1982. Jpn. J. Appl. Phys. (1983)
10.1143/JJAP.21.L65 / Jpn. J. Appl. Phys. (1982)
10.1063/1.91172 / Appl. Phys. Lett. (1979)
10.1103/PhysRev.110.1254 / Phys. Rev. (1958)
10.1143/JJAP.21.L675 / Jpn. J. Appl. Phys. (1982)
10.1143/JPSJ.32.1010 / J. Phys. Soc. Jpn. (1972)

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 1:02 a.m.)
Deposited	2 years, 9 months ago (Nov. 29, 2022, 5:13 a.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:36 a.m.)
Issued	42 years, 4 months ago (April 1, 1983)
Published	42 years, 4 months ago (April 1, 1983)
Published Print	42 years, 4 months ago (April 1, 1983)

Funders 0

None

BibTeX

@article{Inoue_1983, title={Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs}, volume={22}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.22.l213}, DOI={10.1143/jjap.22.l213}, number={4A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Inoue, Masataka and Inayama, Minoru and Hiyamizu, Satoshi and Inuishi, Yoshio}, year={1983}, month=apr, pages={L213} }

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