Abstract
The resistivity and structure of films deposited on tantalum and rocksalt substrates by the electron beam evaporation of boron and the simultaneous bombardment of 30 keV N2 + ion beam were studied. From observation by transmission electron microscope, it was found that cubic boron nitride was produced in the case where the prepared composition rate of boron to nitrogen was 2.5.
References
5
Referenced
142
{'year': '1977', 'key': ''}
(1977){'year': '1981', 'key': ''}
(1981)10.1016/0040-6090(80)90257-6
/ Thin Solid Films (1980){'year': '1981', 'key': ''}
(1981){'year': '1982', 'key': ''}
(1982)
Dates
Type | When |
---|---|
Created | 19 years, 9 months ago (Nov. 4, 2005, 1:02 a.m.) |
Deposited | 2 years, 8 months ago (Nov. 29, 2022, 5:17 a.m.) |
Indexed | 3 months, 3 weeks ago (May 1, 2025, 5:05 a.m.) |
Issued | 42 years, 5 months ago (March 1, 1983) |
Published | 42 years, 5 months ago (March 1, 1983) |
Published Print | 42 years, 5 months ago (March 1, 1983) |
@article{Satou_1983, title={Formation of Cubic Boron Nitride Films by Boron Evaporation and Nitrogen Ion Beam Bombardment}, volume={22}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.22.l171}, DOI={10.1143/jjap.22.l171}, number={3A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Satou, Mamoru and Fujimoto, Fuminori}, year={1983}, month=mar, pages={L171} }