DOI: 10.1143/jjap.22.1502. A Capacitance Investigation of InGaAs/InP Isotype Heterojunction

A Capacitance Investigation of InGaAs/InP Isotype Heterojunction

10.1143/jjap.22.1502

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

We have measured deep levels near the InGaAs/InP heterointerface by DLTS and C-V method. Three deep levels, E1, E2 and E3, have been found near the heterointerface, whose activation energies are 0.17 eV, 0.37 eV and 0.54 eV, respectively. The concentrations of E2 and E3 rapidly decrease when approaching the heterointerface from the InP, indicating that the two levels are located only in the InP substrate. The E1 level, on the other hand, can be found only near the heterointerface. The density of the E1 level is well correlated with the interface charge density which is determined by the C-V analysis. Both of the densities are dependent on the degree of the lattice mismatch between the InGaAs epitaxial layer and the InP substrate.

Bibliography

Ogura, M., Mizuta, M., Onaka, K., & Kukimoto, H. (1983). A Capacitance Investigation of InGaAs/InP Isotype Heterojunction. Japanese Journal of Applied Physics, 22(10R), 1502.

Authors 4

Mototsugu Ogura (first)
Masashi Mizuta (additional)
Kiyoshi Onaka (additional)
Hiroshi Kukimoto (additional)

References 18 Referenced 54

10.1147/rd.141.0061 / IBM J. Res. Dev. (1970)
10.1063/1.88211 / Appl. Phys. Lett. (1975)
10.1143/JJAP.19.L225 / Jpn. J. Appl. Phys. (1980)
10.1016/0079-6786(75)90005-9 / Progr. Solid State Chem. (1975)
10.1149/1.2403386 / J. Electrochem. Soc. (1973)
10.1049/el:19790507 / Electron. Lett. (1979)
10.1063/1.91171 / Appl. Phys. Lett. (1979)
{'key': ''}
10.1063/1.89503 / Appl. Phys. Lett. (1977)
10.1063/1.93770 / Appl. Phys. Lett. (1983)
10.1063/1.93164 / Appl. Phys. Lett. (1982)
10.1116/1.569770 / J. Vac. Sci. & Technol. (1978)
10.1063/1.331462 / J. Appl. Phys. (1982)
10.1063/1.91467 / Appl. Phys. Lett. (1980)
10.1063/1.1663719 / J. Appl. Phys. (1974)
10.1063/1.321896 / J. Appl. Phys. (1975)
10.1143/JJAP.22.658 / Jpn. J. Appl. Phys. (1983)
{'year': '1981', 'key': ''} (1981)

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 1 a.m.)
Deposited	2 years, 9 months ago (Nov. 29, 2022, 5:23 a.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:36 a.m.)
Issued	41 years, 11 months ago (Oct. 1, 1983)
Published	41 years, 11 months ago (Oct. 1, 1983)
Published Print	41 years, 11 months ago (Oct. 1, 1983)

Funders 0

None

BibTeX

@article{Ogura_1983, title={A Capacitance Investigation of InGaAs/InP Isotype Heterojunction}, volume={22}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.22.1502}, DOI={10.1143/jjap.22.1502}, number={10R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Ogura, Mototsugu and Mizuta, Masashi and Onaka, Kiyoshi and Kukimoto, Hiroshi}, year={1983}, month=oct, pages={1502} }

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