DOI: 10.1143/jjap.21.l675. Electrical Properties of Si-Doped Al<sub>x</sub>Ga<sub>1-x</sub>As Layers Grown by MBE

Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBE

10.1143/jjap.21.l675

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Electrical properties of Si-doped Al x Ga1-x As layers grown by MBE were investigated as a function of AlAs mole fraction (0≦x≦0.5). Although ionization energy of Si donor remained constant at a few meV in the range of 0≦x≦0.25, it rapidly became larger with increasing x for x≧0.25. It was found to be 60 meV for x=0.3, which is the composition used in HEMT. The overall trend was similar to the case of Sn- or Te-doped Al x Ga1-x As layers. However, the ionization energy was found to be independent of doping concentration, unlike the case of Sn-doped Al x Ga1-x As layers grown by MBE.

Bibliography

Ishikawa, T., Saito, J., Sasa, S., & Hiyamizu, S. (1982). Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBE. Japanese Journal of Applied Physics, 21(11A), L675.

Authors 4

Tomonori Ishikawa (first)
Junji Saito (additional)
Shigehiko Sasa (additional)
Satoshi Hiyamizu (additional)

References 9 Referenced 71

10.1063/1.92583 / Appl. Phys. Lett. (1981)
10.1143/JJAP.19.L225 / Jpn. J. Appl. Phys. (1980)
10.1063/1.328324 / J. Appl. Phys. (1980)
10.1063/1.90457 / Appl. Phys. Lett. (1978)
10.1063/1.93457 / Appl. Phys. Lett. (1982)
{'key': '', 'first-page': '216', 'volume': '33a', 'year': '1977', 'journal-title': 'Int. Symp. GaAs & Related Compounds 1976, Inst. Phys. Conf. Ser.'} / Int. Symp. GaAs & Related Compounds 1976, Inst. Phys. Conf. Ser. (1977)
10.1063/1.92562 / Appl. Phys. Lett. (1981)
10.1007/BF02657839 / J. Electron. Mater. (1975)
10.1063/1.93061 / Appl. Phys. Lett. (1982)

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 1:15 a.m.)
Deposited	2 years, 9 months ago (Nov. 29, 2022, 4:55 a.m.)
Indexed	1 month, 1 week ago (July 20, 2025, 12:02 a.m.)
Issued	42 years, 9 months ago (Nov. 1, 1982)
Published	42 years, 9 months ago (Nov. 1, 1982)
Published Print	42 years, 9 months ago (Nov. 1, 1982)

Funders 0

None

BibTeX

@article{Ishikawa_1982, title={Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBE}, volume={21}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.21.l675}, DOI={10.1143/jjap.21.l675}, number={11A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Ishikawa, Tomonori and Saito, Junji and Sasa, Shigehiko and Hiyamizu, Satoshi}, year={1982}, month=nov, pages={L675} }

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