DOI: 10.1143/jjap.20.l541. Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer

Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer

10.1143/jjap.20.l541

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

A new method of SOS epitaxial growth is proposed for the improvement of the crystalline quality. The method consists of two process steps: (1) a sapphire surface is first covered with a thin amorphous Si layer prepared by sputtering, and (2) Si CVD is then carried out, which effectively avoids various problems which occur in the early stage of film growth. We have succeeded in obtaining the epitaxial layer of Si on the sapphire substrate covered with an amorphous Si buffer layer (less than 100 Å). A smooth surface of silicon is obtained on the buffer layer in spite of a slow growth rate (∼550 Å/min), a high growth temperature (∼1000°C), and a thin film thickness (0.38–0.66 µm).

Bibliography

Ishida, M., Ohyama, H., Sasaki, S., Yasuda, Y., Nishinaga, T., & Nakamura, T. (1981). Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer. Japanese Journal of Applied Physics, 20(7), L541.

Authors 6

Makoto Ishida (first)
Hidenori Ohyama (additional)
Shuzo Sasaki (additional)
Yukio Yasuda (additional)
Tatau Nishinaga (additional)
Teturo Nakamura (additional)

References 8 Referenced 23

{'key': '', 'first-page': '240', 'volume': '36', 'year': '1975', 'journal-title': 'RCA Rev.'} / RCA Rev. (1975)
10.1063/1.1713618 / J. Appl. Phys. (1964)
10.1143/JJAP.15.225 / Jpn. J. Appl. Phys. (1976)
10.1016/0022-0248(78)90473-6 / J. Cryst. Growth (1978)
10.1116/1.568832 / J. Vac. Sci. & Technol. (1976)
10.1143/JJAP.8.1098 / Jpn. J. Appl. Phys. (1969)
10.1143/JJAP.15.547 / Jpn. J. Appl. Phys. (1977)
10.1016/0022-0248(75)90141-4 / J. Cryst. Growth (1975)

Dates

Type	When
Created	19 years, 10 months ago (Nov. 4, 2005, 1:17 a.m.)
Deposited	2 years, 9 months ago (Nov. 29, 2022, 4:51 a.m.)
Indexed	6 months, 2 weeks ago (Feb. 21, 2025, 5:36 a.m.)
Issued	44 years, 2 months ago (July 1, 1981)
Published	44 years, 2 months ago (July 1, 1981)
Published Print	44 years, 2 months ago (July 1, 1981)

Funders 0

None

BibTeX

@article{Ishida_1981, title={Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer}, volume={20}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.20.l541}, DOI={10.1143/jjap.20.l541}, number={7}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Ishida, Makoto and Ohyama, Hidenori and Sasaki, Shuzo and Yasuda, Yukio and Nishinaga, Tatau and Nakamura, Teturo}, year={1981}, month=jul, pages={L541} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        2,
        21
      ]
    ],
    "date-time": "2025-02-21T10:36:07Z",
    "timestamp": 1740134167463,
    "version": "3.37.3"
  },
  "reference-count": 8,
  "publisher": "IOP Publishing",
  "issue": "7",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1981,
            7,
            1
          ]
        ],
        "date-time": "1981-07-01T00:00:00Z",
        "timestamp": 362793600000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            1981,
            7,
            1
          ]
        ],
        "date-time": "1981-07-01T00:00:00Z",
        "timestamp": 362793600000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1981,
        7,
        1
      ]
    ]
  },
  "abstract": "<jats:p> \n A new method of SOS epitaxial growth is proposed for the improvement of the crystalline quality. The method consists of two process steps: (1) a sapphire surface is first covered with a thin amorphous Si layer prepared by sputtering, and (2) Si CVD is then carried out, which effectively avoids various problems which occur in the early stage of film growth. We have succeeded in obtaining the epitaxial layer of Si on the sapphire substrate covered with an amorphous Si buffer layer (less than 100 \u00c5). A smooth surface of silicon is obtained on the buffer layer in spite of a slow growth rate (\u223c550 \u00c5/min), a high growth temperature (\u223c1000\u00b0C), and a thin film thickness (0.38\u20130.66 \u00b5m). \n </jats:p>",
  "DOI": "10.1143/jjap.20.l541",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        11,
        4
      ]
    ],
    "date-time": "2005-11-04T06:17:28Z",
    "timestamp": 1131085048000
  },
  "page": "L541",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 23,
  "title": "Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer",
  "prefix": "10.35848",
  "volume": "20",
  "author": [
    {
      "given": "Makoto",
      "family": "Ishida",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Hidenori",
      "family": "Ohyama",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Shuzo",
      "family": "Sasaki",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Yukio",
      "family": "Yasuda",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Tatau",
      "family": "Nishinaga",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Teturo",
      "family": "Nakamura",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "reference": [
    {
      "key": "",
      "first-page": "240",
      "volume": "36",
      "year": "1975",
      "journal-title": "RCA Rev."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1349",
      "DOI": "10.1063/1.1713618",
      "volume": "35",
      "year": "1964",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "225",
      "DOI": "10.1143/JJAP.15.225",
      "volume": "15",
      "year": "1976",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "439",
      "DOI": "10.1016/0022-0248(78)90473-6",
      "volume": "45",
      "year": "1978",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "29",
      "DOI": "10.1116/1.568832",
      "volume": "13",
      "year": "1976",
      "journal-title": "J. Vac. Sci. & Technol."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1098",
      "DOI": "10.1143/JJAP.8.1098",
      "volume": "8",
      "year": "1969",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "547",
      "DOI": "10.1143/JJAP.15.547",
      "volume": "15",
      "year": "1977",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "274",
      "DOI": "10.1016/0022-0248(75)90141-4",
      "volume": "31",
      "year": "1975",
      "journal-title": "J. Cryst. Growth"
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.20.L541",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.20.L541/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.20.L541/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.20.L541/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        11,
        29
      ]
    ],
    "date-time": "2022-11-29T09:51:38Z",
    "timestamp": 1669715498000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.20.L541"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1981,
        7,
        1
      ]
    ]
  },
  "references-count": 8,
  "journal-issue": {
    "issue": "7",
    "published-print": {
      "date-parts": [
        [
          1981,
          7,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.20.L541",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "Jpn. J. Appl. Phys.",
  "published": {
    "date-parts": [
      [
        1981,
        7,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 1981 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "1981-05-15",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "1981-06-09",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}