DOI: 10.1143/jjap.20.703. Effect of Growth Temperature on Si MBE Film

Effect of Growth Temperature on Si MBE Film

10.1143/jjap.20.703

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

The dependence of Si MBE film on growth temperature is studied by means of reflection high-energy electron diffraction, Rutherford backscattering and Auger electron spectroscopy. It is found that above 680°C, high-quality epitaxial film can be grown even without intentional preheating by not removing the surface oxide formed during chemical cleaning of the substrate. The surface oxide protects the substrate surface from contamination, and should be removed immediately before growth. In addition, structural imperfections in Si films grown at lower temperatures are observed.

Bibliography

Tabe, M., Arai, K., & Nakamura, H. (1981). Effect of Growth Temperature on Si MBE Film. Japanese Journal of Applied Physics, 20(4), 703.

Authors 3

Michiharu Tabe (first)
Kunihiro Arai (additional)
Hiroaki Nakamura (additional)

References 11 Referenced 23

10.1063/1.1660168 / J. Appl. Phys. (1971)
10.1149/1.2404325 / J. Electrochem. Soc. (1972)
10.1063/1.327717 / J. Appl. Phys. (1980)
10.1063/1.324181 / J. Appl. Phys. (1977)
{'year': '1972', 'key': ''} (1972)
10.1016/0039-6028(79)90657-5 / Surf. Sci. (1979)
10.1016/0039-6028(80)90544-0 / Surf. Sci. (1980)
10.1088/0034-4885/37/3/002 / Rep. Prog. Phys. (1974)
10.1103/PhysRevB.16.3648 / Phys. Rev. B (1977)
10.1080/14786436708222757 / Philos. Mag. (1967)
10.1080/14786437008228158 / Philos. Mag. (1970)

Dates

Type	When
Created	19 years, 10 months ago (Nov. 4, 2005, 1:17 a.m.)
Deposited	2 years, 9 months ago (Nov. 29, 2022, 5:27 a.m.)
Indexed	6 months, 2 weeks ago (Feb. 21, 2025, 5:36 a.m.)
Issued	44 years, 5 months ago (April 1, 1981)
Published	44 years, 5 months ago (April 1, 1981)
Published Print	44 years, 5 months ago (April 1, 1981)

Funders 0

None

BibTeX

@article{Tabe_1981, title={Effect of Growth Temperature on Si MBE Film}, volume={20}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.20.703}, DOI={10.1143/jjap.20.703}, number={4}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Tabe, Michiharu and Arai, Kunihiro and Nakamura, Hiroaki}, year={1981}, month=apr, pages={703} }

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