10.1143/jjap.2.6
Crossref journal-article
IOP Publishing
Japanese Journal of Applied Physics (266)
Abstract

The low frequency dielectric constant of PbTe was determined by measuring the barrier capacitances of PbTe abrupt junctions at about 100 kc/s and low temperatures. The junctions were made by alloying In to p-type base crystals or Ag-Te alloy to n-type crystals. The donor or acceptor density in crystals was controlled by heat treatment to range from 1.5×1017 to 8.0×1018 cm-3. As the low frequency dielectric constant of PbTe a value of 400 was obtained, which is approximately constant in the temperature range from 4.2 to 130°K and in the frequency range from 10 to 150 kc/s. This high value of dielectric constant is sufficient to explain the large value of carrier mobility in PbTe at low temperatures.

Bibliography

Kanai, Y., & Shohno, K. (1963). Dielectric Constant of PbTe. Japanese Journal of Applied Physics, 2(1), 6.

Authors 2
  1. Yasuo Kanai (first)
  2. Katsufusa Shohno (additional)
References 11 Referenced 59
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Dates
Type When
Created 19 years, 9 months ago (Nov. 4, 2005, 2:31 a.m.)
Deposited 2 years, 9 months ago (Nov. 24, 2022, 12:13 p.m.)
Indexed 1 month ago (July 28, 2025, 5:16 p.m.)
Issued 62 years, 7 months ago (Jan. 1, 1963)
Published 62 years, 7 months ago (Jan. 1, 1963)
Published Print 62 years, 7 months ago (Jan. 1, 1963)
Funders 0

None

@article{Kanai_1963, title={Dielectric Constant of PbTe}, volume={2}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.2.6}, DOI={10.1143/jjap.2.6}, number={1}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kanai, Yasuo and Shohno, Katsufusa}, year={1963}, month=jan, pages={6} }