Abstract
The low frequency dielectric constant of PbTe was determined by measuring the barrier capacitances of PbTe abrupt junctions at about 100 kc/s and low temperatures. The junctions were made by alloying In to p-type base crystals or Ag-Te alloy to n-type crystals. The donor or acceptor density in crystals was controlled by heat treatment to range from 1.5×1017 to 8.0×1018 cm-3. As the low frequency dielectric constant of PbTe a value of 400 was obtained, which is approximately constant in the temperature range from 4.2 to 130°K and in the frequency range from 10 to 150 kc/s. This high value of dielectric constant is sufficient to explain the large value of carrier mobility in PbTe at low temperatures.
References
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Dates
Type | When |
---|---|
Created | 19 years, 9 months ago (Nov. 4, 2005, 2:31 a.m.) |
Deposited | 2 years, 9 months ago (Nov. 24, 2022, 12:13 p.m.) |
Indexed | 1 month ago (July 28, 2025, 5:16 p.m.) |
Issued | 62 years, 7 months ago (Jan. 1, 1963) |
Published | 62 years, 7 months ago (Jan. 1, 1963) |
Published Print | 62 years, 7 months ago (Jan. 1, 1963) |
@article{Kanai_1963, title={Dielectric Constant of PbTe}, volume={2}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.2.6}, DOI={10.1143/jjap.2.6}, number={1}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kanai, Yasuo and Shohno, Katsufusa}, year={1963}, month=jan, pages={6} }