DOI: 10.1143/jjap.15.1. Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl Oxidation

Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl Oxidation

10.1143/jjap.15.1

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Bibliography

Shiraki, H. (1976). Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl Oxidation. Japanese Journal of Applied Physics, 15(1), 1â10.

Authors 1

Hiromitsu Shiraki (first)

References 0 Referenced 57

None

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 1:40 a.m.)
Deposited	5 years, 2 months ago (May 31, 2020, 7:24 p.m.)
Indexed	2 months ago (June 25, 2025, 9:16 p.m.)
Issued	49 years, 7 months ago (Jan. 1, 1976)
Published	49 years, 7 months ago (Jan. 1, 1976)
Published Print	49 years, 7 months ago (Jan. 1, 1976)

Funders 0

None

BibTeX

@article{Shiraki_1976, title={Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl Oxidation}, volume={15}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.15.1}, DOI={10.1143/jjap.15.1}, number={1}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Shiraki, Hiromitsu}, year={1976}, month=jan, pages={1–10} }

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