DOI: 10.1143/jjap.14.407. Observation of Lattice Defects in Silicon by Scanning Electron Microscopy Utilizing Beam Induced Current Generated in Schottky Barriers

Observation of Lattice Defects in Silicon by Scanning Electron Microscopy Utilizing Beam Induced Current Generated in Schottky Barriers

10.1143/jjap.14.407

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Bibliography

Kawado, S., Hayafuji, Y., & Adachi, T. (1975). Observation of Lattice Defects in Silicon by Scanning Electron Microscopy Utilizing Beam Induced Current Generated in Schottky Barriers. Japanese Journal of Applied Physics, 14(3), 407â408.

Authors 3

Seiji Kawado (first)
Yoshinori Hayafuji (additional)
Tohru Adachi (additional)

References 0 Referenced 11

None

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 1:46 a.m.)
Deposited	5 years, 2 months ago (May 31, 2020, 7:17 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 6:51 a.m.)
Issued	50 years, 5 months ago (March 1, 1975)
Published	50 years, 5 months ago (March 1, 1975)
Published Print	50 years, 5 months ago (March 1, 1975)

Funders 0

None

BibTeX

@article{Kawado_1975, title={Observation of Lattice Defects in Silicon by Scanning Electron Microscopy Utilizing Beam Induced Current Generated in Schottky Barriers}, volume={14}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.14.407}, DOI={10.1143/jjap.14.407}, number={3}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kawado, Seiji and Hayafuji, Yoshinori and Adachi, Tohru}, year={1975}, month=mar, pages={407–408} }

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