DOI: 10.1143/jjap.14.1079. Electron-Beam-Induced Refractive-Index Change of Amorphous Semiconductors

Electron-Beam-Induced Refractive-Index Change of Amorphous Semiconductors

10.1143/jjap.14.1079

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Bibliography

Suhara, T., Nishihara, H., & Koyama, J. (1975). Electron-Beam-Induced Refractive-Index Change of Amorphous Semiconductors. Japanese Journal of Applied Physics, 14(7), 1079â1080.

Authors 3

Toshiaki Suhara (first)
Hiroshi Nishihara (additional)
Jiro Koyama (additional)

References 0 Referenced 31

None

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 1:48 a.m.)
Deposited	5 years, 2 months ago (May 31, 2020, 7:25 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 11:09 a.m.)
Issued	50 years, 1 month ago (July 1, 1975)
Published	50 years, 1 month ago (July 1, 1975)
Published Print	50 years, 1 month ago (July 1, 1975)

Funders 0

None

BibTeX

@article{Suhara_1975, title={Electron-Beam-Induced Refractive-Index Change of Amorphous Semiconductors}, volume={14}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.14.1079}, DOI={10.1143/jjap.14.1079}, number={7}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Suhara, Toshiaki and Nishihara, Hiroshi and Koyama, Jiro}, year={1975}, month=jul, pages={1079–1080} }

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