DOI: 10.1143/jjap.12.1699. Semiconducting and Dielectric Properties of<i>C</i>-Axia Oriented SbSI Thin Film

Semiconducting and Dielectric Properties ofC-Axia Oriented SbSI Thin Film

10.1143/jjap.12.1699

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Bibliography

Yoshida, M., Yamanaka, K., & Hamakawa, Y. (1973). Semiconducting and Dielectric Properties ofC-Axia Oriented SbSI Thin Film. Japanese Journal of Applied Physics, 12(11), 1699â1705.

Authors 3

Masaru Yoshida (first)
Kenichi Yamanaka (additional)
Yoshihiro Hamakawa (additional)

References 0 Referenced 29

None

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 1:59 a.m.)
Deposited	5 years, 3 months ago (May 31, 2020, 7:27 p.m.)
Indexed	3 months ago (May 27, 2025, 7:46 a.m.)
Issued	51 years, 10 months ago (Nov. 1, 1973)
Published	51 years, 10 months ago (Nov. 1, 1973)
Published Print	51 years, 10 months ago (Nov. 1, 1973)

Funders 0

None

BibTeX

@article{Yoshida_1973, title={Semiconducting and Dielectric Properties ofC-Axia Oriented SbSI Thin Film}, volume={12}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.12.1699}, DOI={10.1143/jjap.12.1699}, number={11}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Yoshida, Masaru and Yamanaka, Kenichi and Hamakawa, Yoshihiro}, year={1973}, month=nov, pages={1699–1705} }

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