DOI: 10.1143/jjap.11.85. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II

Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II

10.1143/jjap.11.85

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Effects of the paramagnetic center observed at Si-SiO2 interface on the surface electron transport in MOSFET and MOS Hall devices are investigated. It is concluded that (1) surface mobility of electrons in the triode region decreases with decreasing partial pressure of water in oxygen for gate oxidation, which corresponds to increase in the density of the paramagnetic center. (2) when the density of the paramagnetic center is in the order of 1013cm-2, some amounts of the induced electrons at the surface seem to be captured by the traps which are associated with the center. (3) the surface mobility in the triode region can be explained by the Coulomb scattering due to the ionized center, the density of which is proportional to the density of the paramagmetic center.

Bibliography

Nishi, Y., Tanaka, K., & Ohwada, A. (1972). Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II. Japanese Journal of Applied Physics, 11(1), 85.

Authors 3

Yoshio Nishi (first)
Kiyoshi Tanaka (additional)
Atsushi Ohwada (additional)

References 12 Referenced 101

10.1103/PhysRev.97.641 / Phys. Rev. (1955)
10.1103/PhysRev.169.619 / Phys. Rev. (1967)
10.1103/PhysRev.163.816 / Phys. Rev. (1967)
10.1143/JJAP.8.588 / Jpn. J. Appl. Phys. (1969)
{'key': ''}
{'key': ''}
{'key': '', 'first-page': '103', 'volume': '53-C', 'year': '1970', 'journal-title': 'Trans. IECE Japan'} / Trans. IECE Japan (1970)
10.1109/PROC.1969.7334 / Proc. IEEE (1969)
10.1143/JJAP.10.52 / Jpn. J. Appl. Phys. (1971)
10.1016/0022-3697(71)90032-1 / J. Phys. Chem. Solids (1971)
10.1063/1.1651913 / Appl. Phys. Lett. (1968)
{'year': '1964', 'key': ''} (1964)

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 2 a.m.)
Deposited	2 years, 9 months ago (Nov. 28, 2022, 6:25 a.m.)
Indexed	5 months ago (March 30, 2025, 7:45 a.m.)
Issued	53 years, 8 months ago (Jan. 1, 1972)
Published	53 years, 8 months ago (Jan. 1, 1972)
Published Print	53 years, 8 months ago (Jan. 1, 1972)

Funders 0

None

BibTeX

@article{Nishi_1972, title={Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II}, volume={11}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.11.85}, DOI={10.1143/jjap.11.85}, number={1}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nishi, Yoshio and Tanaka, Kiyoshi and Ohwada, Atsushi}, year={1972}, month=jan, pages={85} }

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