Abstract
By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons ( ZSiNRs and ZGeNRs ). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency (SFE) of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.
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Dates
Type | When |
---|---|
Created | 13 years ago (Aug. 7, 2012, 10:26 p.m.) |
Deposited | 3 years, 7 months ago (Jan. 25, 2022, 4:22 p.m.) |
Indexed | 2 months, 1 week ago (June 20, 2025, 7:44 a.m.) |
Issued | 12 years, 10 months ago (Oct. 1, 2012) |
Published | 12 years, 10 months ago (Oct. 1, 2012) |
Published Online | 12 years, 8 months ago (Dec. 11, 2012) |
Published Print | 12 years, 10 months ago (Oct. 1, 2012) |
@article{WANG_2012, title={HALF-METALLIC SILICENE AND GERMANENE NANORIBBONS: TOWARDS HIGH-PERFORMANCE SPINTRONICS DEVICE}, volume={07}, ISSN={1793-7094}, url={http://dx.doi.org/10.1142/s1793292012500373}, DOI={10.1142/s1793292012500373}, number={05}, journal={Nano}, publisher={World Scientific Pub Co Pte Ltd}, author={WANG, YANGYANG and ZHENG, JIAXIN and NI, ZEYUAN and FEI, RUIXIANG and LIU, QIHANG and QUHE, RUGE and XU, CHENGYONG and ZHOU, JING and GAO, ZHENGXIANG and LU, JING}, year={2012}, month=oct, pages={1250037} }