DOI: 10.1142/s0218625x98001195. Relaxation of Nanostructures on the Si(111)(7×7) Surface by High Temperature Scanning Tunneling Microscopy

Relaxation of Nanostructures on the Si(111)(7×7) Surface by High Temperature Scanning Tunneling Microscopy

10.1142/s0218625x98001195

Crossref journal-article

World Scientific Pub Co Pte Lt

Surface Review and Letters (219)

Abstract

Single silicon islands have been produced on the Si(111)(7 × 7) surface by a scanning tunneling microscope (STM) tip. Thermal relaxation of the isolated islands is observed by temperature variable scanning tunneling microscopy with strong tip effects. The sizes of islands depend on time t with a functional form of (t0-t)α. It is found that α≃2/3 for single bilayer islands, and α≃1 for three-dimensional ones. During the decomposition of three-dimensional islands, step bunching of over-layers takes place, while the islands have certain facets, like a pyramid just after the creation. At the final stages of the three-dimensional island decompositions, two-dimensional ones with 5 × 5 structure always appear. We have found that characteristic 5 × 5 islands with a long lifetime are formed during relaxation, but the 7 × 7 islands have mostlt a short lifetime. Rotation of small islands is also observed during relaxation. We discuss the results in terms of two-dimensional vapor phase processes.

Bibliography

Ichimiya, A., Tanaka, Y., & Hayashi, K. (1998). Relaxation of Nanostructures on the Si(111)(7Ã7) Surface by High Temperature Scanning Tunneling Microscopy. Surface Review and Letters, 05(03n04), 821â832.

Authors 3

Ayahiko Ichimiya (first)
Yoriko Tanaka (additional)
Kazuhiko Hayashi (additional)

References 14 Referenced 15

10.1038/344524a0
10.1116/1.576390
10.1143/JJAP.33.L190
10.1038/351215a0
10.1103/PhysRevLett.68.1567
10.1103/PhysRevLett.71.2082
10.1103/PhysRevB.47.13432 / Phys. Rev. by Swartzentruber B. S. (1993)
10.1103/PhysRevLett.71.2086
10.1116/1.579716
10.1103/PhysRevLett.76.2306
10.1103/PhysRevLett.76.4721
10.1016/0039-6028(91)90260-Y
10.1016/0039-6028(85)90753-8
10.1143/JPSJ.57.1681

Dates

Type	When
Created	21 years, 11 months ago (Aug. 29, 2003, 9:24 p.m.)
Deposited	6 years ago (Aug. 6, 2019, 5:25 p.m.)
Indexed	2 years, 1 month ago (July 12, 2023, 5:09 a.m.)
Issued	27 years, 2 months ago (June 1, 1998)
Published	27 years, 2 months ago (June 1, 1998)
Published Online	13 years, 4 months ago (April 8, 2012)
Published Print	27 years, 2 months ago (June 1, 1998)

Funders 0

None

BibTeX

@article{Ichimiya_1998, title={Relaxation of Nanostructures on the Si(111)(7×7) Surface by High Temperature Scanning Tunneling Microscopy}, volume={05}, ISSN={1793-6667}, url={http://dx.doi.org/10.1142/s0218625x98001195}, DOI={10.1142/s0218625x98001195}, number={03n04}, journal={Surface Review and Letters}, publisher={World Scientific Pub Co Pte Lt}, author={Ichimiya, Ayahiko and Tanaka, Yoriko and Hayashi, Kazuhiko}, year={1998}, month=jun, pages={821–832} }

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