Abstract
Room temperature electroreflectance measurements have been made on samples of AlxGa1−xAs alloys, grown by liquid epitaxy. The variation of the different band transition energies, E0, E1, E2, etc. has been determined as a function of composition x. For each transition energy, the data have been fitted to the relation E = a + bx + cx2 and hence the bowing parameter c determined. These experimental values of c are compared with the predicted values of Van Vechten.
Dates
Type | When |
---|---|
Created | 14 years, 4 months ago (April 23, 2011, 3:57 p.m.) |
Deposited | 1 month, 3 weeks ago (July 2, 2025, 10:15 a.m.) |
Indexed | 1 month, 3 weeks ago (July 3, 2025, 12:07 a.m.) |
Issued | 54 years, 3 months ago (May 15, 1971) |
Published | 54 years, 3 months ago (May 15, 1971) |
Published Print | 54 years, 3 months ago (May 15, 1971) |
@article{Berolo_1971, title={Electroreflectance Spectra of AlxGa1−xAs Alloys}, volume={49}, ISSN={1208-6045}, url={http://dx.doi.org/10.1139/p71-158}, DOI={10.1139/p71-158}, number={10}, journal={Canadian Journal of Physics}, publisher={Canadian Science Publishing}, author={Berolo, Orazio and Woolley, John C.}, year={1971}, month=may, pages={1335–1339} }