DOI: 10.1134/1.1365181. Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level

Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level

10.1134/1.1365181

Crossref journal-article

Pleiades Publishing Ltd

Semiconductors (137)

Bibliography

Mnatsakanov, T. T., Pomortseva, L. I., & Yurkov, S. N. (2001). Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level. Semiconductors, 35(4), 394â397.

Authors 3

T. T. Mnatsakanov (first)
L. I. Pomortseva (additional)
S. N. Yurkov (additional)

References 24 Referenced 35

T. P. Chow, V. Khemka, J. Fedison, et al., Solid-State Electron. 44, 277 (2000). (10.1016/S0038-1101(99)00235-X) / Solid-State Electron. by T. P. Chow (2000)
Y. Sugawara, K. Asano, R. Singh, and J. W. Palmour, in Abstracts of International Conference on SiC and Related Materials, ICSCRM 1999, Pres. 170.
A. Flasser, M. Chezzo, N. Krishnamurthy, et al., Solid-State Electron. 44, 317 (2000). (10.1016/S0038-1101(99)00238-5) / Solid-State Electron. by A. Flasser (2000)
F. Yang, J. H. Zhao, and G. N. Olsen, Solid-State Electron. 44, 341 (2000). (10.1016/S0038-1101(99)00240-3) / Solid-State Electron. by F. Yang (2000)
K. J. Schoen, J. M. Woodall, J. A. Cooper, and M. R. Malloch, IEEE Trans. Electron Devices 45, 1595 (1998). (10.1109/16.701494) / IEEE Trans. Electron Devices by K. J. Schoen (1998)
N. V. Dyakonova, P. A. Ivanov, V. A. Koslov, et al., IEEE Trans. Electron Devices 46, 2188 (1999). (10.1109/16.796295) / IEEE Trans. Electron Devices by N. V. Dyakonova (1999)
B. Li, L. Cao, and J. H. Zhao, IEEE Electron Device Lett. 20, 219 (1999). (10.1109/55.761020) / IEEE Electron Device Lett. by B. Li (1999)
J. Spitz, M. R. Melloch, J. A. Cooper, and M. A. Capano, Mater. Sci. Forum 264–268, 1005 (1999). / Mater. Sci. Forum by J. Spitz (1999)
R. Schörner, P. Friedrichs, D. Peters, and D. Stephani, IEEE Electron Device Lett. 20, 241 (1999). (10.1109/55.761027) / IEEE Electron Device Lett. by R. Schörner (1999)
J. Wang and B. W. Williams, Semicond. Sci. Technol. 13, 806 (1998). (10.1088/0268-1242/13/7/026) / Semicond. Sci. Technol. by J. Wang (1998)
A. Elford and P. A. Mawby, Microelectron. J. 30, 524 (1999). (10.1016/S0026-2692(98)00175-X) / Microelectron. J. by A. Elford (1999)
S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer-Verlag, New York, 1984). (10.1007/978-3-7091-8752-4) / Analysis and Simulation of Semiconductor Devices by S. Selberherr (1984)
M. Yamanaka, H. Daimon, E. Sakuma, et al., J. Appl. Phys. 61, 599 (1987). (10.1063/1.338211) / J. Appl. Phys. by M. Yamanaka (1987)
M. Shinohara, M. Yamanaka, H. Daimon, et al., Jpn. J. Appl. Phys. 27, L433 (1988). (10.1143/JJAP.27.1299) / Jpn. J. Appl. Phys. by M. Shinohara (1988)
W. J. Choyke and G. Pensl, Mater. Res. Bull., No. 25 (1997). (10.1557/S0883769400032723)
W. J. Schaffer, H. S. Kong, G. N. Nagley, and J. W. Palmour, Inst. Phys. Conf. Ser. 137, 155 (1994). / Inst. Phys. Conf. Ser. by W. J. Schaffer (1994)
R. Mickevicius and J. H. Zhao, J. Appl. Phys. 83, 3161 (1998). (10.1063/1.367073) / J. Appl. Phys. by R. Mickevicius (1998)
G. D. Chen, J. Y. Lin, and H. X. Jaing, Appl. Phys. Lett. 68, 1341 (1996). (10.1063/1.115928) / Appl. Phys. Lett. by G. D. Chen (1996)
D. L. Barrett and R. B. Campbell, J. Appl. Phys. 38, 53 (1967). (10.1063/1.1709008) / J. Appl. Phys. by D. L. Barrett (1967)
G. Rutsch, R. P. Devaty, W. J. Choyke, et al., J. Appl. Phys. 84, 2062 (1998). (10.1063/1.368266) / J. Appl. Phys. by G. Rutsch (1998)
T. Kinoshita, M. Schadt, K. M. Itoh, et al., in Abstracts of International Conference on SiC, III-Nitrides and Related Materials, Stockholm, 1997, p. 631.
H. J. van Daal, W. F. Knippenberg, and J. D. Wasscher, J. Phys. Chem. Solids 24, 109 (1963). (10.1016/0022-3697(63)90046-5) / J. Phys. Chem. Solids by H. J. Daal van (1963)
D. M. Caughey and R. E. Thomas, Proc. IEEE 55, 2192 (1967). (10.1109/PROC.1967.6123) / Proc. IEEE by D. M. Caughey (1967)
V. L. Bonch-Bruevich and S. G. Kalashnikov, Physics of Semiconductors (Nauka, Moscow, 1977). / Physics of Semiconductors by V. L. Bonch-Bruevich (1977)

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 6:26 a.m.)
Deposited	6 years, 3 months ago (June 3, 2019, 1 p.m.)
Indexed	1 year, 2 months ago (June 9, 2024, 4:29 a.m.)
Issued	24 years, 5 months ago (April 1, 2001)
Published	24 years, 5 months ago (April 1, 2001)
Published Print	24 years, 5 months ago (April 1, 2001)

Funders 0

None

BibTeX

@article{Mnatsakanov_2001, title={Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level}, volume={35}, ISSN={1090-6479}, url={http://dx.doi.org/10.1134/1.1365181}, DOI={10.1134/1.1365181}, number={4}, journal={Semiconductors}, publisher={Pleiades Publishing Ltd}, author={Mnatsakanov, T. T. and Pomortseva, L. I. and Yurkov, S. N.}, year={2001}, month=apr, pages={394–397} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        6,
        9
      ]
    ],
    "date-time": "2024-06-09T08:29:43Z",
    "timestamp": 1717921783388
  },
  "reference-count": 24,
  "publisher": "Pleiades Publishing Ltd",
  "issue": "4",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2001,
            4,
            1
          ]
        ],
        "date-time": "2001-04-01T00:00:00Z",
        "timestamp": 986083200000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "http://www.springer.com/tdm"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2001,
        4
      ]
    ]
  },
  "DOI": "10.1134/1.1365181",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        27
      ]
    ],
    "date-time": "2002-07-27T10:26:35Z",
    "timestamp": 1027765595000
  },
  "page": "394-397",
  "source": "Crossref",
  "is-referenced-by-count": 35,
  "title": "Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level",
  "prefix": "10.1134",
  "volume": "35",
  "author": [
    {
      "given": "T. T.",
      "family": "Mnatsakanov",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "L. I.",
      "family": "Pomortseva",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "S. N.",
      "family": "Yurkov",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "137",
  "reference": [
    {
      "key": "1436_CR1",
      "doi-asserted-by": "crossref",
      "first-page": "277",
      "DOI": "10.1016/S0038-1101(99)00235-X",
      "volume": "44",
      "author": "T. P. Chow",
      "year": "2000",
      "unstructured": "T. P. Chow, V. Khemka, J. Fedison, et al., Solid-State Electron. 44, 277 (2000).",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "1436_CR2",
      "unstructured": "Y. Sugawara, K. Asano, R. Singh, and J. W. Palmour, in Abstracts of International Conference on SiC and Related Materials, ICSCRM 1999, Pres. 170."
    },
    {
      "key": "1436_CR3",
      "doi-asserted-by": "crossref",
      "first-page": "317",
      "DOI": "10.1016/S0038-1101(99)00238-5",
      "volume": "44",
      "author": "A. Flasser",
      "year": "2000",
      "unstructured": "A. Flasser, M. Chezzo, N. Krishnamurthy, et al., Solid-State Electron. 44, 317 (2000).",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "1436_CR4",
      "doi-asserted-by": "crossref",
      "first-page": "341",
      "DOI": "10.1016/S0038-1101(99)00240-3",
      "volume": "44",
      "author": "F. Yang",
      "year": "2000",
      "unstructured": "F. Yang, J. H. Zhao, and G. N. Olsen, Solid-State Electron. 44, 341 (2000).",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "1436_CR5",
      "doi-asserted-by": "crossref",
      "first-page": "1595",
      "DOI": "10.1109/16.701494",
      "volume": "45",
      "author": "K. J. Schoen",
      "year": "1998",
      "unstructured": "K. J. Schoen, J. M. Woodall, J. A. Cooper, and M. R. Malloch, IEEE Trans. Electron Devices 45, 1595 (1998).",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "1436_CR6",
      "doi-asserted-by": "crossref",
      "first-page": "2188",
      "DOI": "10.1109/16.796295",
      "volume": "46",
      "author": "N. V. Dyakonova",
      "year": "1999",
      "unstructured": "N. V. Dyakonova, P. A. Ivanov, V. A. Koslov, et al., IEEE Trans. Electron Devices 46, 2188 (1999).",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "1436_CR7",
      "doi-asserted-by": "crossref",
      "first-page": "219",
      "DOI": "10.1109/55.761020",
      "volume": "20",
      "author": "B. Li",
      "year": "1999",
      "unstructured": "B. Li, L. Cao, and J. H. Zhao, IEEE Electron Device Lett. 20, 219 (1999).",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "1436_CR8",
      "first-page": "1005",
      "volume": "264\u2013268",
      "author": "J. Spitz",
      "year": "1999",
      "unstructured": "J. Spitz, M. R. Melloch, J. A. Cooper, and M. A. Capano, Mater. Sci. Forum 264\u2013268, 1005 (1999).",
      "journal-title": "Mater. Sci. Forum"
    },
    {
      "key": "1436_CR9",
      "doi-asserted-by": "crossref",
      "first-page": "241",
      "DOI": "10.1109/55.761027",
      "volume": "20",
      "author": "R. Sch\u00f6rner",
      "year": "1999",
      "unstructured": "R. Sch\u00f6rner, P. Friedrichs, D. Peters, and D. Stephani, IEEE Electron Device Lett. 20, 241 (1999).",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "1436_CR10",
      "doi-asserted-by": "crossref",
      "first-page": "806",
      "DOI": "10.1088/0268-1242/13/7/026",
      "volume": "13",
      "author": "J. Wang",
      "year": "1998",
      "unstructured": "J. Wang and B. W. Williams, Semicond. Sci. Technol. 13, 806 (1998).",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "1436_CR11",
      "doi-asserted-by": "crossref",
      "first-page": "524",
      "DOI": "10.1016/S0026-2692(98)00175-X",
      "volume": "30",
      "author": "A. Elford",
      "year": "1999",
      "unstructured": "A. Elford and P. A. Mawby, Microelectron. J. 30, 524 (1999).",
      "journal-title": "Microelectron. J."
    },
    {
      "key": "1436_CR12",
      "doi-asserted-by": "crossref",
      "DOI": "10.1007/978-3-7091-8752-4",
      "volume-title": "Analysis and Simulation of Semiconductor Devices",
      "author": "S. Selberherr",
      "year": "1984",
      "unstructured": "S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer-Verlag, New York, 1984)."
    },
    {
      "key": "1436_CR13",
      "doi-asserted-by": "crossref",
      "first-page": "599",
      "DOI": "10.1063/1.338211",
      "volume": "61",
      "author": "M. Yamanaka",
      "year": "1987",
      "unstructured": "M. Yamanaka, H. Daimon, E. Sakuma, et al., J. Appl. Phys. 61, 599 (1987).",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "1436_CR14",
      "doi-asserted-by": "crossref",
      "first-page": "L433",
      "DOI": "10.1143/JJAP.27.1299",
      "volume": "27",
      "author": "M. Shinohara",
      "year": "1988",
      "unstructured": "M. Shinohara, M. Yamanaka, H. Daimon, et al., Jpn. J. Appl. Phys. 27, L433 (1988).",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "1436_CR15",
      "doi-asserted-by": "crossref",
      "unstructured": "W. J. Choyke and G. Pensl, Mater. Res. Bull., No. 25 (1997).",
      "DOI": "10.1557/S0883769400032723"
    },
    {
      "key": "1436_CR16",
      "first-page": "155",
      "volume": "137",
      "author": "W. J. Schaffer",
      "year": "1994",
      "unstructured": "W. J. Schaffer, H. S. Kong, G. N. Nagley, and J. W. Palmour, Inst. Phys. Conf. Ser. 137, 155 (1994).",
      "journal-title": "Inst. Phys. Conf. Ser."
    },
    {
      "key": "1436_CR17",
      "doi-asserted-by": "crossref",
      "first-page": "3161",
      "DOI": "10.1063/1.367073",
      "volume": "83",
      "author": "R. Mickevicius",
      "year": "1998",
      "unstructured": "R. Mickevicius and J. H. Zhao, J. Appl. Phys. 83, 3161 (1998).",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "1436_CR18",
      "doi-asserted-by": "crossref",
      "first-page": "1341",
      "DOI": "10.1063/1.115928",
      "volume": "68",
      "author": "G. D. Chen",
      "year": "1996",
      "unstructured": "G. D. Chen, J. Y. Lin, and H. X. Jaing, Appl. Phys. Lett. 68, 1341 (1996).",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "1436_CR19",
      "doi-asserted-by": "crossref",
      "first-page": "53",
      "DOI": "10.1063/1.1709008",
      "volume": "38",
      "author": "D. L. Barrett",
      "year": "1967",
      "unstructured": "D. L. Barrett and R. B. Campbell, J. Appl. Phys. 38, 53 (1967).",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "1436_CR20",
      "doi-asserted-by": "crossref",
      "first-page": "2062",
      "DOI": "10.1063/1.368266",
      "volume": "84",
      "author": "G. Rutsch",
      "year": "1998",
      "unstructured": "G. Rutsch, R. P. Devaty, W. J. Choyke, et al., J. Appl. Phys. 84, 2062 (1998).",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "1436_CR21",
      "unstructured": "T. Kinoshita, M. Schadt, K. M. Itoh, et al., in Abstracts of International Conference on SiC, III-Nitrides and Related Materials, Stockholm, 1997, p. 631."
    },
    {
      "key": "1436_CR22",
      "doi-asserted-by": "crossref",
      "first-page": "109",
      "DOI": "10.1016/0022-3697(63)90046-5",
      "volume": "24",
      "author": "H. J. Daal van",
      "year": "1963",
      "unstructured": "H. J. van Daal, W. F. Knippenberg, and J. D. Wasscher, J. Phys. Chem. Solids 24, 109 (1963).",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "1436_CR23",
      "doi-asserted-by": "crossref",
      "first-page": "2192",
      "DOI": "10.1109/PROC.1967.6123",
      "volume": "55",
      "author": "D. M. Caughey",
      "year": "1967",
      "unstructured": "D. M. Caughey and R. E. Thomas, Proc. IEEE 55, 2192 (1967).",
      "journal-title": "Proc. IEEE"
    },
    {
      "key": "1436_CR24",
      "volume-title": "Physics of Semiconductors",
      "author": "V. L. Bonch-Bruevich",
      "year": "1977",
      "unstructured": "V. L. Bonch-Bruevich and S. G. Kalashnikov, Physics of Semiconductors (Nauka, Moscow, 1977)."
    }
  ],
  "container-title": "Semiconductors",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "http://link.springer.com/content/pdf/10.1134/1.1365181.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "http://link.springer.com/article/10.1134/1.1365181/fulltext.html",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "http://link.springer.com/content/pdf/10.1134/1.1365181",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2019,
        6,
        3
      ]
    ],
    "date-time": "2019-06-03T17:00:01Z",
    "timestamp": 1559581201000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://link.springer.com/10.1134/1.1365181"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2001,
        4
      ]
    ]
  },
  "references-count": 24,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          2001,
          4
        ]
      ]
    }
  },
  "alternative-id": [
    "1436"
  ],
  "URL": "http://dx.doi.org/10.1134/1.1365181",
  "relation": {},
  "ISSN": [
    "1063-7826",
    "1090-6479"
  ],
  "subject": [],
  "container-title-short": "Semiconductors",
  "published": {
    "date-parts": [
      [
        2001,
        4
      ]
    ]
  }
}