Abstract
Stacking a ferroelectric Properties of layered van der Waals structures can depend sensitively on the stacking arrangement of constituent layers. This phenomenon has been exploited to engineer superconducting, correlated insulator, and magnetic states. Two groups now show that ferroelectricity can also be engineered through stacking: Parallel-stacked bilayers of hexagonal boron nitride exhibit ferroelectric switching even though the bulk material is not ferroelectric (see the Perspective by Tsymbal). To explore these phenomena, Yasuda et al. used transport measurements, whereas Vizner Stern et al. focused on atomic force microscopy. Science , abd3230 and abe8177, this issue p. 1458 and p. 1462 ; see also abi7296, p. 1389
Authors
10
- M. Vizner Stern (first)
- Y. Waschitz (additional)
- W. Cao (additional)
- I. Nevo (additional)
- K. Watanabe (additional)
- T. Taniguchi (additional)
- E. Sela (additional)
- M. Urbakh (additional)
- O. Hod (additional)
- M. Ben Shalom (additional)
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Dates
Type | When |
---|---|
Created | 4 years, 2 months ago (June 10, 2021, 3:15 p.m.) |
Deposited | 1 year, 7 months ago (Jan. 15, 2024, 5:29 p.m.) |
Indexed | 54 minutes ago (Aug. 21, 2025, 6:01 a.m.) |
Issued | 4 years, 1 month ago (June 25, 2021) |
Published | 4 years, 1 month ago (June 25, 2021) |
Published Print | 4 years, 1 month ago (June 25, 2021) |
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@article{Vizner_Stern_2021, title={Interfacial ferroelectricity by van der Waals sliding}, volume={372}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.abe8177}, DOI={10.1126/science.abe8177}, number={6549}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Vizner Stern, M. and Waschitz, Y. and Cao, W. and Nevo, I. and Watanabe, K. and Taniguchi, T. and Sela, E. and Urbakh, M. and Hod, O. and Ben Shalom, M.}, year={2021}, month=jun, pages={1462–1466} }