Crossref journal-article
American Association for the Advancement of Science (AAAS)
Science (221)
Abstract

Getting more bits out of PCRAM Phase-change random access memory (PCRAM) has the ability to both store and process information. It also suffers from noise and electrical drift due to damage that accumulates during the cycling process. Ding et al. developed a phase-change heterostructure where a phase-change material is separated by a confinement material, creating an alternating stack (see the Perspective by Gholipour). This architecture results in ultralow noise, lower drift, and stable multilevel storage capacity, which are potentially useful for new forms of computing. Science , this issue p. 210 ; see also p. 186

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Ding, K., Wang, J., Zhou, Y., Tian, H., Lu, L., Mazzarello, R., Jia, C., Zhang, W., Rao, F., & Ma, E. (2019). Phase-change heterostructure enables ultralow noise and drift for memory operation. Science, 366(6462), 210–215.

Authors 10
  1. Keyuan Ding (first)
  2. Jiangjing Wang (additional)
  3. Yuxing Zhou (additional)
  4. He Tian (additional)
  5. Lu Lu (additional)
  6. Riccardo Mazzarello (additional)
  7. Chunlin Jia (additional)
  8. Wei Zhang (additional)
  9. Feng Rao (additional)
  10. Evan Ma (additional)
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Dates
Type When
Created 6 years ago (Aug. 22, 2019, 7:07 p.m.)
Deposited 1 year, 7 months ago (Jan. 15, 2024, 7:26 p.m.)
Indexed 2 days, 3 hours ago (Aug. 21, 2025, 1:23 p.m.)
Issued 5 years, 10 months ago (Oct. 11, 2019)
Published 5 years, 10 months ago (Oct. 11, 2019)
Published Print 5 years, 10 months ago (Oct. 11, 2019)
Funders 7
  1. Deutsche Forschungsgemeinschaft 10.13039/501100001659

    Region: Europe

    gov (National government)

    Labels3
    1. German Research Association
    2. German Research Foundation
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    1. SFB7
  2. National Natural Science Foundation of China 10.13039/501100001809

    Region: Asia

    gov (National government)

    Labels11
    1. Chinese National Science Foundation
    2. Natural Science Foundation of China
    3. National Science Foundation of China
    4. NNSF of China
    5. NSF of China
    6. 国家自然科学基金委员会
    7. National Nature Science Foundation of China
    8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
    9. NSFC
    10. NNSF
    11. NNSFC
    Awards1
    1. 61622408
  3. National Natural Science Foundation of China 10.13039/501100001809

    Region: Asia

    gov (National government)

    Labels11
    1. Chinese National Science Foundation
    2. Natural Science Foundation of China
    3. National Science Foundation of China
    4. NNSF of China
    5. NSF of China
    6. 国家自然科学基金委员会
    7. National Nature Science Foundation of China
    8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
    9. NSFC
    10. NNSF
    11. NNSFC
    Awards1
    1. 61774123
  4. National Natural Science Foundation of China 10.13039/501100001809

    Region: Asia

    gov (National government)

    Labels11
    1. Chinese National Science Foundation
    2. Natural Science Foundation of China
    3. National Science Foundation of China
    4. NNSF of China
    5. NSF of China
    6. 国家自然科学基金委员会
    7. National Nature Science Foundation of China
    8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
    9. NSFC
    10. NNSF
    11. NNSFC
    Awards1
    1. 11474249
  5. National 973 Program of China
    Awards1
    1. 2015CB654901
  6. Science and Technology Foundation of Shenzhen
    Awards1
    1. JCYJ20180507182248605
  7. Major Provincial Basic Research Program of Guangdong
    Awards1
    1. 2017KZDXM070

@article{Ding_2019, title={Phase-change heterostructure enables ultralow noise and drift for memory operation}, volume={366}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.aay0291}, DOI={10.1126/science.aay0291}, number={6462}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Ding, Keyuan and Wang, Jiangjing and Zhou, Yuxing and Tian, He and Lu, Lu and Mazzarello, Riccardo and Jia, Chunlin and Zhang, Wei and Rao, Feng and Ma, Evan}, year={2019}, month=oct, pages={210–215} }