DOI: 10.1126/science.aaq1479. 3D charge and 2D phonon transports leading to high out-of-plane <i>ZT</i> in n-type SnSe crystals

3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals

10.1126/science.aaq1479

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

SnSe doped a different way Heat can be converted into electricity by thermoelectric materials. Such materials are promising for use in solid-state cooling devices. A challenge for developing efficient thermoelectric materials is to ensure high electrical but low thermal conductivity. Chang et al. found that bromine doping of tin selenide (SnSe) does just this by maintaining low thermal conductivity in the out-of-plane direction of this layered material. The result is a promising n-type thermoelectric material with electrons as the charge carriers—an important step for developing thermoelectric devices from SnSe. Science , this issue p. 778

Bibliography

Chang, C., Wu, M., He, D., Pei, Y., Wu, C.-F., Wu, X., Yu, H., Zhu, F., Wang, K., Chen, Y., Huang, L., Li, J.-F., He, J., & Zhao, L.-D. (2018). 3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals. Science, 360(6390), 778â783.

Authors 14

Cheng Chang (first)
Minghui Wu (additional)
Dongsheng He (additional)
Yanling Pei (additional)
Chao-Feng Wu (additional)
Xuefeng Wu (additional)
Hulei Yu (additional)
Fangyuan Zhu (additional)
Kedong Wang (additional)
Yue Chen (additional)
Li Huang (additional)
Jing-Feng Li (additional)
Jiaqing He (additional)
Li-Dong Zhao (additional)

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Dates

Type	When
Created	7 years, 3 months ago (May 17, 2018, 2:05 p.m.)
Deposited	1 year, 7 months ago (Jan. 15, 2024, 12:02 p.m.)
Indexed	48 minutes ago (Aug. 21, 2025, 7:24 a.m.)
Issued	7 years, 3 months ago (May 18, 2018)
Published	7 years, 3 months ago (May 18, 2018)
Published Print	7 years, 3 months ago (May 18, 2018)

Funders 0

None

BibTeX

@article{Chang_2018, title={3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals}, volume={360}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.aaq1479}, DOI={10.1126/science.aaq1479}, number={6390}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Chang, Cheng and Wu, Minghui and He, Dongsheng and Pei, Yanling and Wu, Chao-Feng and Wu, Xuefeng and Yu, Hulei and Zhu, Fangyuan and Wang, Kedong and Chen, Yue and Huang, Li and Li, Jing-Feng and He, Jiaqing and Zhao, Li-Dong}, year={2018}, month=may, pages={778–783} }

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