DOI: 10.1126/science.aao3212. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

10.1126/science.aao3212

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Fast phase change with no preconditions Random access memory (RAM) devices that rely on phase changes are primarily limited by the speed of crystallization. Rao et al. combined theory with a simple set of selection criteria to isolate a scandium-doped antimony telluride (SST) with a subnanosecond crystallization speed (see the Perspective by Akola and Jones). They synthesized SST and constructed a RAM device with a 700-picosecond writing speed. This is an order of magnitude faster than previous phase-change memory devices and competitive with consumer dynamic access, static random access, and flash memory. Science , this issue p. 1423 ; see also p. 1386

Bibliography

Rao, F., Ding, K., Zhou, Y., Zheng, Y., Xia, M., Lv, S., Song, Z., Feng, S., Ronneberger, I., Mazzarello, R., Zhang, W., & Ma, E. (2017). Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing. Science, 358(6369), 1423â1427.

Authors 12

Feng Rao (first)
Keyuan Ding (additional)
Yuxing Zhou (additional)
Yonghui Zheng (additional)
Mengjiao Xia (additional)
Shilong Lv (additional)
Zhitang Song (additional)
Songlin Feng (additional)
Ider Ronneberger (additional)
Riccardo Mazzarello (additional)
Wei Zhang (additional)
Evan Ma (additional)

References 50 Referenced 549

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Dates

Type	When
Created	7 years, 9 months ago (Nov. 9, 2017, 2 p.m.)
Deposited	1 year, 7 months ago (Jan. 15, 2024, 11:21 a.m.)
Indexed	26 minutes ago (Aug. 21, 2025, 6:20 a.m.)
Issued	7 years, 8 months ago (Dec. 15, 2017)
Published	7 years, 8 months ago (Dec. 15, 2017)
Published Print	7 years, 8 months ago (Dec. 15, 2017)

Funders 6

U.S. Department of Energy 10.13039/100000015
Region: Americas
gov (National government)
Labels8
1. Energy Department
2. Department of Energy
3. United States Department of Energy
4. ENERGY.GOV
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8. USADOE
Awards1
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Deutsche Forschungsgemeinschaft 10.13039/501100001659
Region: Europe
gov (National government)
Labels3
1. German Research Association
2. German Research Foundation
3. DFG
Awards1
1. SFB917
National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
Labels11
1. Chinese National Science Foundation
2. Natural Science Foundation of China
3. National Science Foundation of China
4. NNSF of China
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6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
9. NSFC
10. NNSF
11. NNSFC
Awards1
1. 61622408
National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
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2. Natural Science Foundation of China
3. National Science Foundation of China
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6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
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Chinese Academy of Sciences 10.13039/501100002367
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gov (Universities (academic only))
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2. Academia Sinica
3. CAS
Awards1
1. XDA09020402
Science and Technology Foundation of Shenzhen
Awards1
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BibTeX

@article{Rao_2017, title={Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing}, volume={358}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.aao3212}, DOI={10.1126/science.aao3212}, number={6369}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Rao, Feng and Ding, Keyuan and Zhou, Yuxing and Zheng, Yonghui and Xia, Mengjiao and Lv, Shilong and Song, Zhitang and Feng, Songlin and Ronneberger, Ider and Mazzarello, Riccardo and Zhang, Wei and Ma, Evan}, year={2017}, month=dec, pages={1423–1427} }

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