DOI: 10.1126/science.aah4698. MoS<sub>2</sub>transistors with 1-nanometer gate lengths

MoS2transistors with 1-nanometer gate lengths

10.1126/science.aah4698

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

A flatter route to shorter channelsHigh-performance silicon transistors can have gate lengths as short as 5 nm before source-drain tunneling and loss of electrostatic control lead to unacceptable leakage current when the device is off. Desaiet al.explored the use of MoS2as a channel material, given that its electronic properties as thin layers should limit such leakage. A transistor with a 1-nm physical gate was constructed with a MoS2bilayer channel and a single-walled carbon nanotube gate electrode. Excellent switching characteristics and an on-off state current ratio of ∼106were observed.Science, this issue p.99

Bibliography

Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., Wong, H.-S. P., & Javey, A. (2016). MoS2transistors with 1-nanometer gate lengths. Science, 354(6308), 99â102.

Authors 12

Sujay B. Desai (first)
Surabhi R. Madhvapathy (additional)
Angada B. Sachid (additional)
Juan Pablo Llinas (additional)
Qingxiao Wang (additional)
Geun Ho Ahn (additional)
Gregory Pitner (additional)
Moon J. Kim (additional)
Jeffrey Bokor (additional)
Chenming Hu (additional)
H.-S. Philip Wong (additional)
Ali Javey (additional)

References 43 Referenced 1,306

10.1126/science.1187597
10.1038/nmat2014
10.1126/science.aab2750
10.1126/science.1079567
M. Luisier M. Lundstrom D. A. Antoniadis J. Bokor in Electron Devices Meeting (IEDM) 2011 IEEE International (IEEE 2011) pp. 11.12.11–1.12.14. (10.1109/IEDM.2011.6131531)
10.1063/1.126789
10.1109/LED.2015.2413785
10.1038/nnano.2010.279
10.1038/nature15387
10.1021/nn303513c
10.1021/nl302015v
10.1126/science.1250140
10.1021/nn500064s
10.1073/pnas.1405435111
10.1073/pnas.0502848102
10.1038/nnano.2014.150
10.1021/nl2018178
10.1109/TED.2013.2284591
10.1063/1.4869142
10.1109/16.249482
10.1088/0957-4484/19/32/325201
10.1109/TNANO.2009.2016562
10.1038/nnano.2010.15
10.1021/nl049222b
10.1002/adma.201402008
10.1109/16.817582
BarbutL.JazaeriF.BouvetD.SalleseJ.-M., Downscaling and short channel effects in twin gate junctionless vertical slit FETs. Int. J. Microelectron. Comput. Sci. 4, 103–109 (2013). / Int. J. Microelectron. Comput. Sci. / Downscaling and short channel effects in twin gate junctionless vertical slit FETs by Barbut L. (2013)
10.1109/16.398660
10.1038/nature14417
10.1109/55.720194
Mark Lundstrom (2005) “Notes on the Ballistic MOSFET ” https://nanohub.org/resources/489.
10.1109/TED.2015.2457424
10.1016/0038-1101(67)90122-0
10.1038/ncomms7088
10.1109/LED.2008.2005651
10.1021/nl403251e
10.1103/PhysRevLett.105.136805
10.1109/TED.2007.915056
International Technology Roadmap for Semiconductors (ITRS) 2013 http://www.itrs2.net/2013-itrs.html.
S. M. Sze K. K. Ng Physics of Semiconductor Devices (3rd ed. Wiley 2006). (10.1002/0470068329)
10.1088/0508-3443/18/6/305
10.1109/TED.2008.919308
10.1021/nl303583v

Dates

Type	When
Created	8 years, 10 months ago (Oct. 6, 2016, 2:13 p.m.)
Deposited	2 months, 3 weeks ago (June 10, 2025, 10:06 p.m.)
Indexed	2 days, 15 hours ago (Aug. 29, 2025, 6:36 a.m.)
Issued	8 years, 10 months ago (Oct. 7, 2016)
Published	8 years, 10 months ago (Oct. 7, 2016)
Published Print	8 years, 10 months ago (Oct. 7, 2016)

Funders 6

U.S. Department of Energy 10.13039/100000015
Region: Americas
gov (National government)
Labels8
1. Energy Department
2. Department of Energy
3. United States Department of Energy
4. ENERGY.GOV
5. US Department of Energy
6. USDOE
7. DOE
8. USADOE
Awards1
1. DE-AC02-05CH11231
Applied Materials, Inc. 10.13039/100007309 Applied Materials
Region: Americas
gov (For-profit companies (industry))
Labels2
1. Applied Materials, Inc.
2. Applied Materials Technology
Entegris, Inc.
I-RiCE program
Office of Naval Research BRC 10.13039/100000006 Office of Naval Research
Region: Americas
gov (National government)
Labels6
1. U.S. Office of Naval Research
2. Naval Research
3. United States Office of Naval Research
4. U.S. Department of the Navy Office of Naval Research
5. The Office of Naval Research
6. ONR
NRI SWAN Center and Chinese Academy of Sciences President's International Fellowship Initiative
Awards1
1. 2015VTA031

BibTeX

@article{Desai_2016, title={MoS2transistors with 1-nanometer gate lengths}, volume={354}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.aah4698}, DOI={10.1126/science.aah4698}, number={6308}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Desai, Sujay B. and Madhvapathy, Surabhi R. and Sachid, Angada B. and Llinas, Juan Pablo and Wang, Qingxiao and Ahn, Geun Ho and Pitner, Gregory and Kim, Moon J. and Bokor, Jeffrey and Hu, Chenming and Wong, H.-S. Philip and Javey, Ali}, year={2016}, month=oct, pages={99–102} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        29
      ]
    ],
    "date-time": "2025-08-29T10:36:49Z",
    "timestamp": 1756463809988,
    "version": "3.41.0"
  },
  "reference-count": 43,
  "publisher": "American Association for the Advancement of Science (AAAS)",
  "issue": "6308",
  "funder": [
    {
      "DOI": "10.13039/100000015",
      "name": "U.S. Department of Energy",
      "doi-asserted-by": "publisher",
      "award": [
        "DE-AC02-05CH11231"
      ],
      "id": [
        {
          "id": "10.13039/100000015",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    },
    {
      "DOI": "10.13039/100007309",
      "name": "Applied Materials, Inc.",
      "doi-asserted-by": "publisher",
      "id": [
        {
          "id": "10.13039/100007309",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    },
    {
      "name": "Entegris, Inc."
    },
    {
      "name": "I-RiCE program"
    },
    {
      "DOI": "10.13039/100000006",
      "name": "Office of Naval Research BRC",
      "doi-asserted-by": "publisher",
      "id": [
        {
          "id": "10.13039/100000006",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    },
    {
      "name": "NRI SWAN Center and Chinese Academy of Sciences President's International Fellowship Initiative",
      "award": [
        "2015VTA031"
      ]
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2016,
        10,
        7
      ]
    ]
  },
  "abstract": "<jats:title>A flatter route to shorter channels</jats:title><jats:p>High-performance silicon transistors can have gate lengths as short as 5 nm before source-drain tunneling and loss of electrostatic control lead to unacceptable leakage current when the device is off. Desai<jats:italic>et al.</jats:italic>explored the use of MoS<jats:sub>2</jats:sub>as a channel material, given that its electronic properties as thin layers should limit such leakage. A transistor with a 1-nm physical gate was constructed with a MoS<jats:sub>2</jats:sub>bilayer channel and a single-walled carbon nanotube gate electrode. Excellent switching characteristics and an on-off state current ratio of \u223c10<jats:sup>6</jats:sup>were observed.</jats:p><jats:p><jats:italic>Science</jats:italic>, this issue p.<jats:related-article xmlns:xlink=\"http://www.w3.org/1999/xlink\" ext-link-type=\"doi\" issue=\"6308\" page=\"99\" related-article-type=\"in-this-issue\" vol=\"354\" xlink:href=\"10.1126/science.aah4698\">99</jats:related-article></jats:p>",
  "DOI": "10.1126/science.aah4698",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2016,
        10,
        6
      ]
    ],
    "date-time": "2016-10-06T18:13:31Z",
    "timestamp": 1475777611000
  },
  "page": "99-102",
  "source": "Crossref",
  "is-referenced-by-count": 1306,
  "title": "MoS<sub>2</sub>transistors with 1-nanometer gate lengths",
  "prefix": "10.1126",
  "volume": "354",
  "author": [
    {
      "given": "Sujay B.",
      "family": "Desai",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA."
        },
        {
          "name": "Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA."
        },
        {
          "name": "Berkeley Sensor and Actuator Center, University of California, Berkeley, CA 94720, USA."
        }
      ]
    },
    {
      "given": "Surabhi R.",
      "family": "Madhvapathy",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA."
        },
        {
          "name": "Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA."
        }
      ]
    },
    {
      "given": "Angada B.",
      "family": "Sachid",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA."
        },
        {
          "name": "Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA."
        }
      ]
    },
    {
      "given": "Juan Pablo",
      "family": "Llinas",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA."
        },
        {
          "name": "Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA."
        }
      ]
    },
    {
      "given": "Qingxiao",
      "family": "Wang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA."
        }
      ]
    },
    {
      "given": "Geun Ho",
      "family": "Ahn",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA."
        },
        {
          "name": "Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA."
        }
      ]
    },
    {
      "given": "Gregory",
      "family": "Pitner",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical Engineering, Stanford University, Stanford, CA 94305, USA."
        }
      ]
    },
    {
      "given": "Moon J.",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA."
        }
      ]
    },
    {
      "given": "Jeffrey",
      "family": "Bokor",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA."
        },
        {
          "name": "Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA."
        }
      ]
    },
    {
      "given": "Chenming",
      "family": "Hu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA."
        }
      ]
    },
    {
      "given": "H.-S. Philip",
      "family": "Wong",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical Engineering, Stanford University, Stanford, CA 94305, USA."
        }
      ]
    },
    {
      "given": "Ali",
      "family": "Javey",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA."
        },
        {
          "name": "Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA."
        },
        {
          "name": "Berkeley Sensor and Actuator Center, University of California, Berkeley, CA 94720, USA."
        }
      ]
    }
  ],
  "member": "221",
  "reference": [
    {
      "key": "e_1_3_2_2_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/science.1187597"
    },
    {
      "key": "e_1_3_2_3_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nmat2014"
    },
    {
      "key": "e_1_3_2_4_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/science.aab2750"
    },
    {
      "key": "e_1_3_2_5_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/science.1079567"
    },
    {
      "key": "e_1_3_2_6_2",
      "doi-asserted-by": "crossref",
      "unstructured": "M. Luisier M. Lundstrom D. A. Antoniadis J. Bokor in Electron Devices Meeting (IEDM) 2011 IEEE International (IEEE 2011) pp. 11.12.11\u20131.12.14.",
      "DOI": "10.1109/IEDM.2011.6131531"
    },
    {
      "key": "e_1_3_2_7_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.126789"
    },
    {
      "key": "e_1_3_2_8_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/LED.2015.2413785"
    },
    {
      "key": "e_1_3_2_9_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2010.279"
    },
    {
      "key": "e_1_3_2_10_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nature15387"
    },
    {
      "key": "e_1_3_2_11_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nn303513c"
    },
    {
      "key": "e_1_3_2_12_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl302015v"
    },
    {
      "key": "e_1_3_2_13_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/science.1250140"
    },
    {
      "key": "e_1_3_2_14_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nn500064s"
    },
    {
      "key": "e_1_3_2_15_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1073/pnas.1405435111"
    },
    {
      "key": "e_1_3_2_16_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1073/pnas.0502848102"
    },
    {
      "key": "e_1_3_2_17_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2014.150"
    },
    {
      "key": "e_1_3_2_18_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl2018178"
    },
    {
      "key": "e_1_3_2_19_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/TED.2013.2284591"
    },
    {
      "key": "e_1_3_2_20_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.4869142"
    },
    {
      "key": "e_1_3_2_22_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.249482"
    },
    {
      "key": "e_1_3_2_23_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1088/0957-4484/19/32/325201"
    },
    {
      "key": "e_1_3_2_24_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/TNANO.2009.2016562"
    },
    {
      "key": "e_1_3_2_25_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2010.15"
    },
    {
      "key": "e_1_3_2_26_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl049222b"
    },
    {
      "key": "e_1_3_2_27_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.201402008"
    },
    {
      "key": "e_1_3_2_28_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.817582"
    },
    {
      "key": "e_1_3_2_29_2",
      "first-page": "103",
      "article-title": "Downscaling and short channel effects in twin gate junctionless vertical slit FETs",
      "volume": "4",
      "author": "Barbut L.",
      "year": "2013",
      "unstructured": "BarbutL.JazaeriF.BouvetD.SalleseJ.-M., Downscaling and short channel effects in twin gate junctionless vertical slit FETs. Int. J. Microelectron. Comput. Sci. 4, 103\u2013109 (2013).",
      "journal-title": "Int. J. Microelectron. Comput. Sci."
    },
    {
      "key": "e_1_3_2_30_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.398660"
    },
    {
      "key": "e_1_3_2_31_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nature14417"
    },
    {
      "key": "e_1_3_2_32_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/55.720194"
    },
    {
      "key": "e_1_3_2_33_2",
      "unstructured": "Mark Lundstrom (2005) \u201cNotes on the Ballistic MOSFET \u201d https://nanohub.org/resources/489."
    },
    {
      "key": "e_1_3_2_34_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/TED.2015.2457424"
    },
    {
      "key": "e_1_3_2_35_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0038-1101(67)90122-0"
    },
    {
      "key": "e_1_3_2_36_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/ncomms7088"
    },
    {
      "key": "e_1_3_2_37_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/LED.2008.2005651"
    },
    {
      "key": "e_1_3_2_38_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl403251e"
    },
    {
      "key": "e_1_3_2_39_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevLett.105.136805"
    },
    {
      "key": "e_1_3_2_40_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/TED.2007.915056"
    },
    {
      "key": "e_1_3_2_41_2",
      "unstructured": "International Technology Roadmap for Semiconductors (ITRS) 2013 http://www.itrs2.net/2013-itrs.html."
    },
    {
      "key": "e_1_3_2_42_2",
      "doi-asserted-by": "crossref",
      "unstructured": "S. M. Sze K. K. Ng Physics of Semiconductor Devices (3rd ed. Wiley 2006).",
      "DOI": "10.1002/0470068329"
    },
    {
      "key": "e_1_3_2_43_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1088/0508-3443/18/6/305"
    },
    {
      "key": "e_1_3_2_44_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/TED.2008.919308"
    },
    {
      "key": "e_1_3_2_45_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl303583v"
    }
  ],
  "container-title": "Science",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://www.science.org/doi/pdf/10.1126/science.aah4698",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2025,
        6,
        11
      ]
    ],
    "date-time": "2025-06-11T02:06:10Z",
    "timestamp": 1749607570000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://www.science.org/doi/10.1126/science.aah4698"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2016,
        10,
        7
      ]
    ]
  },
  "references-count": 43,
  "journal-issue": {
    "issue": "6308",
    "published-print": {
      "date-parts": [
        [
          2016,
          10,
          7
        ]
      ]
    }
  },
  "alternative-id": [
    "10.1126/science.aah4698"
  ],
  "URL": "http://dx.doi.org/10.1126/science.aah4698",
  "relation": {},
  "ISSN": [
    "0036-8075",
    "1095-9203"
  ],
  "subject": [],
  "container-title-short": "Science",
  "published": {
    "date-parts": [
      [
        2016,
        10,
        7
      ]
    ]
  }
}