DOI: 10.1126/science.aab4097. Epitaxial growth of a monolayer WSe <sub>2</sub> -MoS <sub>2</sub> lateral p-n junction with an atomically sharp interface

Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface

10.1126/science.aab4097

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Electronic junctions on edge Two-dimensional materials such as graphene are attractive materials for making smaller transistors because they are inherently nanoscale and can carry high currents. However, graphene has no band gap and the transistors are “leaky”; that is, they are hard to turn off. Related transition metal dichalcogenides (TMDCs) such as molybdenum sulfide have band gaps. Transistors based on these materials can have high ratios of “on” to “off” currents. However, it is often difficult to make a good voltage-biased (p-n) junction between different TMDC materials. Li et al. succeeded in making p-n heterojunctions between two of these materials, molybdenum sulfide and tungsten selenide. They did this not by stacking the layers, which make a weak junction, but by growing molybdenum sulfide on the edge of a triangle of tungsten selenide with an atomically sharp boundary Science , this issue p. 524

Bibliography

Li, M.-Y., Shi, Y., Cheng, C.-C., Lu, L.-S., Lin, Y.-C., Tang, H.-L., Tsai, M.-L., Chu, C.-W., Wei, K.-H., He, J.-H., Chang, W.-H., Suenaga, K., & Li, L.-J. (2015). Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface. Science, 349(6247), 524â528.

Authors 13

Ming-Yang Li (first)
Yumeng Shi (additional)
Chia-Chin Cheng (additional)
Li-Syuan Lu (additional)
Yung-Chang Lin (additional)
Hao-Lin Tang (additional)
Meng-Lin Tsai (additional)
Chih-Wei Chu (additional)
Kung-Hwa Wei (additional)
Jr-Hau He (additional)
Wen-Hao Chang (additional)
Kazu Suenaga (additional)
Lain-Jong Li (additional)

References 38 Referenced 1,102

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Dates

Type	When
Created	10 years ago (July 30, 2015, 3:03 p.m.)
Deposited	1 year, 7 months ago (Jan. 15, 2024, 12:23 p.m.)
Indexed	2 days, 1 hour ago (Aug. 20, 2025, 9:07 a.m.)
Issued	10 years ago (July 31, 2015)
Published	10 years ago (July 31, 2015)
Published Print	10 years ago (July 31, 2015)

Funders 7

Ministry of Science and Technology 10.13039/100007225
Region: Asia
gov (National government)
Labels3
1. Ministry of Science and Technology of the Socialist Republic of Vietnam
2. Vietnamese Ministry of Science and Technology
3. MOST
MOST of Taiwan 10.13039/100007225 Ministry of Science and Technology
Region: Asia
gov (National government)
Labels3
1. Ministry of Science and Technology of the Socialist Republic of Vietnam
2. Vietnamese Ministry of Science and Technology
3. MOST
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Academia Sinica 10.13039/501100001869
Region: Asia
pri (Universities (academic only))
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2. Academia Sinica's
3. AS
Japan Science and Technology Agency 10.13039/501100002241
Region: Asia
gov (National government)
Labels7
1. SCIENCE AND TECHNOLOGY AGENCY OF JAPAN
2. 国立研究開発法人科学技術振興機構
3. 国立研究開発法人科学技術振興機構 japan science and technology agency
4. Japan Science and Technology Agency (JST)
5. かがくぎじゅつしんこうきこう
6. 科学技術振興機構
7. JST
King Abdullah University of Science and Technology 10.13039/501100004052
Region: Asia
pri (Universities (academic only))
Labels2
1. جامعة الملك عبدالله للعلوم والتقنية
2. KAUST
Taiwan Consortium of Emergent Crystalline Materials (TCEM)
TCEM

BibTeX

@article{Li_2015, title={Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface}, volume={349}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.aab4097}, DOI={10.1126/science.aab4097}, number={6247}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Li, Ming-Yang and Shi, Yumeng and Cheng, Chia-Chin and Lu, Li-Syuan and Lin, Yung-Chang and Tang, Hao-Lin and Tsai, Meng-Lin and Chu, Chih-Wei and Wei, Kung-Hwa and He, Jr-Hau and Chang, Wen-Hao and Suenaga, Kazu and Li, Lain-Jong}, year={2015}, month=jul, pages={524–528} }

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