Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
10.1126/science.293.5529.468
Crossref journal-article
American Association for the Advancement of Science (AAAS)
Science (221)
Abstract

We show that the physical and electrical structure and hence the inversion charge for crystalline oxides on semiconductors can be understood and systematically manipulated at the atomic level. Heterojunction band offset and alignment are adjusted by atomic-level structural and chemical changes, resulting in the demonstration of an electrical interface between a polar oxide and a semiconductor free of interface charge. In a broader sense, we take the metal oxide semiconductor device to a new and prominent position in the solid-state electronics timeline. It can now be extensively developed using an entirely new physical system: the crystalline oxides–on–semiconductors interface.

Bibliography

McKee, R. A., Walker, F. J., & Chisholm, M. F. (2001). Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide. Science, 293(5529), 468–471.

Authors 3
  1. R. A. McKee (first)
  2. F. J. Walker (additional)
  3. M. F. Chisholm (additional)
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Dates
Type When
Created 23 years ago (July 27, 2002, 5:39 a.m.)
Deposited 1 year, 7 months ago (Jan. 13, 2024, 3:53 a.m.)
Indexed 5 days ago (Aug. 19, 2025, 6:09 a.m.)
Issued 24 years, 1 month ago (July 20, 2001)
Published 24 years, 1 month ago (July 20, 2001)
Published Print 24 years, 1 month ago (July 20, 2001)
Funders 0

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@article{McKee_2001, title={Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide}, volume={293}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.293.5529.468}, DOI={10.1126/science.293.5529.468}, number={5529}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={McKee, R. A. and Walker, F. J. and Chisholm, M. F.}, year={2001}, month=jul, pages={468–471} }