DOI: 10.1126/science.290.5500.2277. Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures

Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures

10.1126/science.290.5500.2277

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

The quantum cascade laser, which uses electronic transitions within a single band of a semiconductor, constitutes a possible way to integrate active optical components into silicon-based technology. This concept necessitates a transition with a narrow linewidth and an upper state with a sufficiently long lifetime. We report the observation of intersubband electroluminescence from a p-type silicon/silicon-germanium quantum cascade structure, centered at 130 millielectron volts with a width of 22 millielectron volts, with the expected polarization, and discernible up to 180 kelvin. The nonradiative lifetime is found to depend strongly on the design of the quantum well structure, and is shown to reach values comparable to that of an equivalent GaInAs/AlInAs laser structure.

Bibliography

Dehlinger, G., Diehl, L., Gennser, U., Sigg, H., Faist, J., Ensslin, K., GruÌtzmacher, D., & MuÌller, E. (2000). Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures. Science, 290(5500), 2277â2280.

Authors 8

G. Dehlinger (first)
L. Diehl (additional)
U. Gennser (additional)
H. Sigg (additional)
J. Faist (additional)
K. Ensslin (additional)
D. Grützmacher (additional)
E. Müller (additional)

References 18 Referenced 261

10.1126/science.264.5158.553
This does not take into account the momentum transfer to the photon [see e.g.
Graf S., Sigg H., Köhler K., Bächthold W., Phys. Rev. Lett. 84, 2686 (2000)]. (10.1103/PhysRevLett.84.2686) / Phys. Rev. Lett. by Graf S. (2000)
Yang R. Q., et al., Appl. Phys. Lett. 71, 2409 (1997). (10.1063/1.120076) / Appl. Phys. Lett. by Yang R. Q. (1997)
Sirtori C., et al., Appl. Phys. Lett. 73, 3486 (1998). (10.1063/1.122812) / Appl. Phys. Lett. by Sirtori C. (1998)
Schrenk W., et al., Appl. Phys. Lett. 76, 253 (1999). (10.1063/1.125738) / Appl. Phys. Lett. by Schrenk W. (1999)
Sun G., Friedman L., Soref R. A., Appl. Phys. Lett. 66, 3425 (1995). (10.1063/1.113375) / Appl. Phys. Lett. by Sun G. (1995)
J. Faist F. Capasso C. Sirtori D. L. Sivco A. Y. Cho in Intersubband Transitions in Quantum Wells Semiconductor and Semimetal H. C. Liu F. Capasso Eds. (Academic Press London 2000) vol. 66 chap. 1 and references therein.
Reciprocal space mapping along the (113) and (224) Bragg planes was performed.
Fromherz T., et al., Appl. Phys. Lett. 68, 3611 (1996). (10.1063/1.115746) / Appl. Phys. Lett. by Fromherz T. (1996)
Fromherz T., et al., Phys. Rev. B 50, 10573 (1994). (10.1103/PhysRevB.50.15073) / Phys. Rev. B by Fromherz T. (1994)
Kruck P., et al., Appl. Phys. Lett. 76, 3340 (2000). (10.1063/1.126686) / Appl. Phys. Lett. by Kruck P. (2000)
Faist J., et al., Appl. Phys. Lett. 63, 1354 (1993). (10.1063/1.109675) / Appl. Phys. Lett. by Faist J. (1993)
Faist J., et al., Appl. Phys. Lett. 65, 94 (1994). (10.1063/1.113086) / Appl. Phys. Lett. by Faist J. (1994)
S. Blaser et al. unpublished data.
Boucaud P., et al., Appl. Phys. Lett. 69, 3069 (1996). (10.1063/1.116842) / Appl. Phys. Lett. by Boucaud P. (1996)
In a recent sample we have also been able to demonstrate a confinement shift (observed EL energy 154 meV; calculated HH2 → HH1 transition 149 meV).
Supported by the Schweizerischer Nationalfonds and Bundesamt für Bildung und Wissenschaft Nr 99 0078. We thank M. Kummer S. Blaser D. Hofstetter and S. Stutz for technical and analytical assistance.

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:47 a.m.)
Deposited	1 year, 7 months ago (Jan. 13, 2024, 4:57 a.m.)
Indexed	2 months, 3 weeks ago (June 6, 2025, 5:08 a.m.)
Issued	24 years, 8 months ago (Dec. 22, 2000)
Published	24 years, 8 months ago (Dec. 22, 2000)
Published Print	24 years, 8 months ago (Dec. 22, 2000)

Funders 0

None

BibTeX

@article{Dehlinger_2000, title={Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures}, volume={290}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.290.5500.2277}, DOI={10.1126/science.290.5500.2277}, number={5500}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Dehlinger, G. and Diehl, L. and Gennser, U. and Sigg, H. and Faist, J. and Ensslin, K. and Grützmacher, D. and Müller, E.}, year={2000}, month=dec, pages={2277–2280} }

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