Abstract
Modulation doping of a semiconducting single-walled carbon nanotube along its length leads to an intramolecular wire electronic device. The nanotube is doped n -type for half of its length and p -type for the other half. Electrostatic gating can tune the system into p - n junctions, causing it to exhibit rectifying characteristics or negative differential conductance. The system can also be tuned into n -type, exhibiting single-electron charging and negative differential conductance at low temperatures. The low-temperature behavior is manifested by a quantum dot formed by chemical inhomogeneity along the tube.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 27, 2002, 5:48 a.m.) |
Deposited | 1 year, 7 months ago (Jan. 13, 2024, 5:39 a.m.) |
Indexed | 4 days, 14 hours ago (Aug. 23, 2025, 12:59 a.m.) |
Issued | 24 years, 9 months ago (Nov. 24, 2000) |
Published | 24 years, 9 months ago (Nov. 24, 2000) |
Published Print | 24 years, 9 months ago (Nov. 24, 2000) |
@article{Zhou_2000, title={Modulated Chemical Doping of Individual Carbon Nanotubes}, volume={290}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.290.5496.1552}, DOI={10.1126/science.290.5496.1552}, number={5496}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Zhou, Chongwu and Kong, Jing and Yenilmez, Erhan and Dai, Hongjie}, year={2000}, month=nov, pages={1552–1555} }