Abstract
We report here on the structure and operating characteristics of an ambipolar light-emitting field-effect transistor based on single crystals of the organic semiconductor α-sexithiophene. Electrons and holes are injected from the source and drain electrodes, respectively. Their concentrations are controlled by the applied gate and drain-source voltages. Excitons are generated, leading to radiative recombination. Moreover, above a remarkably low threshold current, coherent light is emitted through amplified spontaneous emission. Hence, this three-terminal device is the basis of a very promising architecture for electrically driven laser action in organic semiconductors.
References
22
Referenced
96
-
Pfleiderer H., IEEE Trans. Electron. Devices ED-33, 145 (1986).
(
10.1109/T-ED.1986.22451
) / IEEE Trans. Electron. Devices by Pfleiderer H. (1986) -
Neudeck G. W., Bare H. F., Chung K. Y., IEEE Trans Electron. Devices ED-34, 344 (1987).
(
10.1109/T-ED.1987.22928
) / IEEE Trans Electron. Devices by Neudeck G. W. (1987) -
Dodabalapur A., Katz H. E., Torsi L., Haddon R. C., Science 269, 1560 (1995).
(
10.1126/science.269.5230.1560
) / Science by Dodabalapur A. (1995) - J. H. Schön S. Berg Ch. Kloc
10.1126/science.287.5455.1022
- J. H. Schön Ch. Kloc B. Batlogg in Proceedings of the European Materials Research Society Spring Meeting May/June 2000 Strasbourg France in press.
-
Dodabalapur A., Katz H. E., Torsi L., Haddon R. C., Appl. Phys. Lett. 68, 1108 (1996).
(
10.1063/1.115728
) / Appl. Phys. Lett. by Dodabalapur A. (1996) -
Dodabalapur A., Katz H. E., Torsi L., Adv. Mater. 10, 853 (1996).
(
10.1002/adma.19960081021
) / Adv. Mater. by Dodabalapur A. (1996) -
Horowitz G., et al., Adv. Mater. 6, 752 (1994).
(
10.1002/adma.19940061007
) / Adv. Mater. by Horowitz G. (1994) -
Garnier F., et al., Appl. Phys. Lett. 72, 2087 (1998).
(
10.1063/1.121284
) / Appl. Phys. Lett. by Garnier F. (1998) -
Fichou D., Delysse S., Nunzi J.-M., Adv. Mater. 9, 1178 (1997).
(
10.1002/adma.19970091512
) / Adv. Mater. by Fichou D. (1997) - Ch. Kloc
10.1016/S0022-0248(97)00370-9
-
Muccini M., et al., J. Chem. Phys. 108, 7327 (1998).
(
10.1063/1.476151
) / J. Chem. Phys. by Muccini M. (1998) -
Casperson L. W., Yariv A., IEEE J. Quantum Electron. 8, 80 (1972).
(
10.1109/JQE.1972.1076944
) / IEEE J. Quantum Electron. by Casperson L. W. (1972) -
Zou Z., Huffaker D. L., Deppe D. G., IEEE Photon. Technol. Lett. 12, 1 (2000).
(
10.1109/68.817427
) / IEEE Photon. Technol. Lett. by Zou Z. (2000) - J. H. Schön Ch. Kloc
- Dodabalapur A., Batlogg B., Science 289, 589 (2000). / Science by Dodabalapur A. (2000)
-
Berggren M., Dodabalapur A., Slusher R. E., Bao Z., Nature 389, 466 (1997).
(
10.1038/38979
) / Nature by Berggren M. (1997) -
Rogers J. A., Meier M., Dodabalapur A., Appl. Phys. Lett. 74, 3257 (1999).
(
10.1063/1.123312
) / Appl. Phys. Lett. by Rogers J. A. (1999) -
Mekis A., Dodabalapur A., Slusher R. E., Joannopoulos J. D., Opt. Lett. 25, 942 (2000).
(
10.1364/OL.25.000942
) / Opt. Lett. by Mekis A. (2000) - We thank Z. Bao F. Capasso E. A. Chandross S. V. Frolov H. E. Katz and R. E. Slusher for many helpful discussions.
Dates
Type | When |
---|---|
Created | 23 years ago (July 27, 2002, 5:47 a.m.) |
Deposited | 1 year, 7 months ago (Jan. 13, 2024, 4:09 a.m.) |
Indexed | 1 month ago (July 20, 2025, 6:55 p.m.) |
Issued | 24 years, 9 months ago (Nov. 3, 2000) |
Published | 24 years, 9 months ago (Nov. 3, 2000) |
Published Print | 24 years, 9 months ago (Nov. 3, 2000) |
@article{Scho_n_2000, title={A Light-Emitting Field-Effect Transistor}, volume={290}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.290.5493.963}, DOI={10.1126/science.290.5493.963}, number={5493}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Schön, J. H. and Dodabalapur, A. and Kloc, Ch. and Batlogg, B.}, year={2000}, month=nov, pages={963–965} }