10.1126/science.290.5493.963
Crossref journal-article
American Association for the Advancement of Science (AAAS)
Science (221)
Abstract

We report here on the structure and operating characteristics of an ambipolar light-emitting field-effect transistor based on single crystals of the organic semiconductor α-sexithiophene. Electrons and holes are injected from the source and drain electrodes, respectively. Their concentrations are controlled by the applied gate and drain-source voltages. Excitons are generated, leading to radiative recombination. Moreover, above a remarkably low threshold current, coherent light is emitted through amplified spontaneous emission. Hence, this three-terminal device is the basis of a very promising architecture for electrically driven laser action in organic semiconductors.

Bibliography

Schön, J. H., Dodabalapur, A., Kloc, Ch., & Batlogg, B. (2000). A Light-Emitting Field-Effect Transistor. Science, 290(5493), 963–965.

Authors 4
  1. J. H. Schön (first)
  2. A. Dodabalapur (additional)
  3. Ch. Kloc (additional)
  4. B. Batlogg (additional)
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Dates
Type When
Created 23 years ago (July 27, 2002, 5:47 a.m.)
Deposited 1 year, 7 months ago (Jan. 13, 2024, 4:09 a.m.)
Indexed 1 month ago (July 20, 2025, 6:55 p.m.)
Issued 24 years, 9 months ago (Nov. 3, 2000)
Published 24 years, 9 months ago (Nov. 3, 2000)
Published Print 24 years, 9 months ago (Nov. 3, 2000)
Funders 0

None

@article{Scho_n_2000, title={A Light-Emitting Field-Effect Transistor}, volume={290}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.290.5493.963}, DOI={10.1126/science.290.5493.963}, number={5493}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Schön, J. H. and Dodabalapur, A. and Kloc, Ch. and Batlogg, B.}, year={2000}, month=nov, pages={963–965} }