DOI: 10.1126/science.287.5455.1022. Ambipolar Pentacene Field-Effect Transistors and Inverters

Ambipolar Pentacene Field-Effect Transistors and Inverters

10.1126/science.287.5455.1022

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Organic field-effect transistors based on pentacene single crystals, prepared with an amorphous aluminum oxide gate insulator, are capable of ambipolar operation and can be used for the preparation of complementary inverter circuits. The field-effect mobilities of carriers in these transistors increase from 2.7 and 1.7 square centimeters per volt per second at room temperature up to 1200 and 320 square centimeters per volt per second at low temperatures for hole and electron transport, respectively, following a power-law dependence. The possible simplification of the fabrication process of complementary logic circuits with these transistors, together with the high carrier mobilities, may be seen as another step toward applications of plastic electronics.

Bibliography

SchoÌn, J. H., Berg, S., Kloc, Ch., & Batlogg, B. (2000). Ambipolar Pentacene Field-Effect Transistors and Inverters. Science, 287(5455), 1022â1023.

Authors 4

J. H. Schön (first)
S. Berg (additional)
Ch. Kloc (additional)
B. Batlogg (additional)

References 28 Referenced 318

Garnier F., Horowitz G., Fichou D., Yassar A., Synth. Met. 81, 163 (1996). (10.1016/S0379-6779(96)03761-7) / Synth. Met. by Garnier F. (1996)
Dimitrakopoulos C. D., Furman B. K., Graham T., Hedge S., Purushothaman S., Synth. Met. 92, 47 (1998). (10.1016/S0379-6779(98)80021-0) / Synth. Met. by Dimitrakopoulos C. D. (1998)
Horowitz G., Adv. Mater. 10, 365 (1998). (10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO;2-U) / Adv. Mater. by Horowitz G. (1998)
H. E. Katz Z. Bao A. Dodabalapur in Handbook of Oligo- and Polythiophenes D. Fichou Ed. (Wiley-VCH Weinheim Germany 1998) pp. 459–489. (10.1002/9783527611713.ch9)
Nelson S. F., Lin Y.-Y., Gundlach D. J., Jackson T. N., Appl. Phys. Lett. 72, 1854 (1998). (10.1063/1.121205) / Appl. Phys. Lett. by Nelson S. F. (1998)
Lin Y. Y., Gundlach D. J., Nelson S. F., Jackson T. N., IEEE Trans. Electron Devices 44, 1325 (1997). (10.1109/16.605476) / IEEE Trans. Electron Devices by Lin Y. Y. (1997)
10.1126/science.283.5403.822
D. de Leeuw Phys. World (March 1999) p. 31. (10.1088/2058-7058/12/3/27)
Klauk H., Gundlach D. J., Nichols J. A., Jackson T. N., IEEE Trans. Electron Devices 46, 1258 (1999). (10.1109/16.766895) / IEEE Trans. Electron Devices by Klauk H. (1999)
10.1126/science.280.5370.1741
Dodabalapur A., et al., Appl. Phys. Lett. 73, 142 (1998). (10.1063/1.121736) / Appl. Phys. Lett. by Dodabalapur A. (1998)
Dodabalapur A., Katz H. E., Torsi L., Haddon R. C., Science 269, 1560 (1995). (10.1126/science.269.5230.1560) / Science by Dodabalapur A. (1995)
___, Appl. Phys. Lett. 68, 1108 (1996). (10.1063/1.115728) / Appl. Phys. Lett. by ___ (1996)
10.1126/science.270.5238.972
Klauk H., Gundlach D. J., Jackson T. N., IEEE Electron Devices Lett. 20, 289 (1999). (10.1109/55.767101) / IEEE Electron Devices Lett. by Klauk H. (1999)
Drury C. J., Mutsaers C. M. J., Hart C. M., Matters M., de Leeuw D. M., Appl. Phys. Lett. 73, 108 (1998). (10.1063/1.121783) / Appl. Phys. Lett. by Drury C. J. (1998)
Lin Y. Y., et al., Appl. Phys. Lett. 74, 2714 (1999). (10.1063/1.123946) / Appl. Phys. Lett. by Lin Y. Y. (1999)
Ch. Kloc
10.1016/S0022-0248(97)00370-9
J. H. Schön Ch. Kloc
Laudise R. A., Batlogg B., Phys. Rev. B 58, 12952 (1998). (10.1103/PhysRevB.58.12952) / Phys. Rev. B by Laudise R. A. (1998)
S. M. Sze Physics of Semiconductor Devices (Wiley New York 1981) p. 442.
N. Karl Organic Semiconductors vol. 17 of Landolt-Börnstein New Series Semiconductors O. Madelung M. Schulz H. Weiss Eds. (Springer-Verlag Berlin 1985) subvolume 17i pp. 106–218.
Neudeck G. W., Bare H. F., Chung K. Y., IEEE Trans. Electron Devices 34, 344 (1987). (10.1109/T-ED.1987.22928) / IEEE Trans. Electron Devices by Neudeck G. W. (1987)
Matsumura M., Nara Y., J. Appl. Phys. 51, 6443 (1980). (10.1063/1.327599) / J. Appl. Phys. by Matsumura M. (1980)
Schön J. H., Batlogg B., Appl. Phys. Lett. 74, 260 (1999). (10.1063/1.123274) / Appl. Phys. Lett. by Schön J. H. (1999)
Warta W., Karl N., Phys. Rev. B 32, 1172 (1985). (10.1103/PhysRevB.32.1172) / Phys. Rev. B by Warta W. (1985)
One of the authors (J.H.S.) gratefully acknowledges financial support by the Deutsche Forschungsgemeinschaft. Furthermore we thank E. Bucher for use of equipment and Z. Bao A. Dodabalapur H. Katz and G. A. Thomas for helpful discussions.

Dates

Type	When
Created	23 years ago (July 27, 2002, 5:40 a.m.)
Deposited	1 year, 7 months ago (Jan. 13, 2024, 5:48 a.m.)
Indexed	1 month, 3 weeks ago (July 4, 2025, 8:45 a.m.)
Issued	25 years, 6 months ago (Feb. 11, 2000)
Published	25 years, 6 months ago (Feb. 11, 2000)
Published Print	25 years, 6 months ago (Feb. 11, 2000)

Funders 0

None

BibTeX

@article{Scho_n_2000, title={Ambipolar Pentacene Field-Effect Transistors and Inverters}, volume={287}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.287.5455.1022}, DOI={10.1126/science.287.5455.1022}, number={5455}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Schön, J. H. and Berg, S. and Kloc, Ch. and Batlogg, B.}, year={2000}, month=feb, pages={1022–1023} }

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