All-Inorganic Field Effect Transistors Fabricated by Printing
10.1126/science.286.5440.746
Crossref journal-article
American Association for the Advancement of Science (AAAS)
Science (221)
Abstract

A solution of cadmium selenide nanocrystals was used to print inorganic thin-film transistors with field effect mobilities up to 1 square centimeter per volt second. This mobility is an order of magnitude larger than those reported for printed organic transistors. A field effect was achieved by developing a synthesis that yielded discretely sized nanocrystals less than 2 nanometers in size, which were free of intimately bound organic capping groups. The resulting nanocrystal solution exhibited low-temperature grain growth, which formed single crystal areas encompassing hundreds of nanocrystals. This process suggests a route to inexpensive, all-printed, high-quality inorganic logic on plastic substrates.

Bibliography

Ridley, B. A., Nivi, B., & Jacobson, J. M. (1999). All-Inorganic Field Effect Transistors Fabricated by Printing. Science, 286(5440), 746–749.

Authors 3
  1. Brent A. Ridley (first)
  2. Babak Nivi (additional)
  3. Joseph M. Jacobson (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 27, 2002, 5:49 a.m.)
Deposited 1 year, 7 months ago (Jan. 13, 2024, 4:52 a.m.)
Indexed 3 weeks, 2 days ago (Aug. 5, 2025, 9:07 a.m.)
Issued 25 years, 10 months ago (Oct. 22, 1999)
Published 25 years, 10 months ago (Oct. 22, 1999)
Published Print 25 years, 10 months ago (Oct. 22, 1999)
Funders 0

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@article{Ridley_1999, title={All-Inorganic Field Effect Transistors Fabricated by Printing}, volume={286}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.286.5440.746}, DOI={10.1126/science.286.5440.746}, number={5440}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Ridley, Brent A. and Nivi, Babak and Jacobson, Joseph M.}, year={1999}, month=oct, pages={746–749} }