Heterostructures of Single-Walled Carbon Nanotubes and Carbide Nanorods
10.1126/science.285.5434.1719
Crossref journal-article
American Association for the Advancement of Science (AAAS)
Science (221)
Abstract

A method based on a controlled solid-solid reaction was used to fabricate heterostructures between single-walled carbon nanotubes (SWCNTs) and nanorods or particles of silicon carbide and transition metal carbides. Characterization by high-resolution transmission electron microscopy and electron diffraction indicates that the heterostructures have well-defined crystalline interfaces. The SWCNT/carbide interface, with a nanometer-scale area defined by the cross section of a SWCNT bundle or of a single nanotube, represents the smallest heterojunction that can be achieved using carbon nanotubes, and it can be expected to play an important role in the future fabrication of hybrid nanodevices.

Bibliography

Zhang, Y., Ichihashi, T., Landree, E., Nihey, F., & Iijima, S. (1999). Heterostructures of Single-Walled Carbon Nanotubes and Carbide Nanorods. Science, 285(5434), 1719–1722.

Authors 5
  1. Y. Zhang (first)
  2. T. Ichihashi (additional)
  3. E. Landree (additional)
  4. F. Nihey (additional)
  5. S. Iijima (additional)
References 35 Referenced 365
  1. 10.1038/354056a0
  2. Iijima S. Ichihashi T. 363 603 (1993). (10.1038/363603a0)
  3. M. S. Dresselhaus G. Dresselhaus P. Eklund Science of Fullerenes and Carbon Nanotubes (Academic Press New York 1996). Experimental verification using STM has been reported recently [ (10.1016/B978-012221820-0/50003-4)
  4. Wildàer J. W. G., Venema L. C., Rinzler A. G., Smalley R. E., Dekker C., Nature 391, 59 (1998); (10.1038/34139) / Nature by Wildàer J. W. G. (1998)
  5. ; T. W. Odom J.-L. Huang P. Kim C. M. Lieber ibid. p. 62].
  6. G. L. Harris Ed. Properties of Silicon Carbide (INSPEC Institution of Electrical Engineers London 1995).
  7. W. S. Williams J. Mater. 49 (no. 3) 38 (1997) (10.1007/BF02914655)
  8. L. E. Toth Transition Metal Carbides and Nitrides (Academic Press New York and London 1971).
  9. Dia H., Wong E. W., Lu Y. Z., Fan S., Lieber C., Nature 375, 769 (1995); (10.1038/375769a0) / Nature by Dia H. (1995)
  10. Zhou D., Seraphin S., Chem. Phys. Lett. 222, 233 (1994); (10.1016/0009-2614(94)00342-4) / Chem. Phys. Lett. by Zhou D. (1994)
  11. Han W. et al. 265 374 (1997). (10.1016/S0009-2614(96)01441-8)
  12. Ideally the ends of open nanotubes are more reactive than the walls and thus a vapor-solid reaction could occur preferentially at nanotube ends to form a nanotube/carbide heterojunction at a precisely controlled temperature. However nanotubes actually produced contain defects and contamination by amorphous carbon along the length of their walls which can act as preferential sites for carbonizing to occur.
  13. Hu J., Ouyang M., Yang P., Lieber C. M., Nature 399, 48 (1999). (10.1038/19941) / Nature by Hu J. (1999)
  14. The growth mechanism is inferred from a series of studies of the formation of SiC films on Si substrates using hydrocarbon or C 60 carbonization methods that showed that the growth of SiC after nucleation happened at the C/SiC interface rather than the SiC/Si interface [
  15. Graul J., Wagner E., Appl. Phys. Lett. 21, 67 (1972); (10.1063/1.1654282) / Appl. Phys. Lett. by Graul J. (1972)
  16. Mogab C. J., Leamy H. J., J. Appl. Phys. 45, 1075 (1974); (10.1063/1.1663370) / J. Appl. Phys. by Mogab C. J. (1974)
  17. Li J. P., Steckl A. J., J. Electrochem. Soc. 142, 634 (1995); (10.1149/1.2044113) / J. Electrochem. Soc. by Li J. P. (1995)
  18. Hamza A. V., Balooch M., Moalem M., Surf. Sci. 317, L1129 (1994) ; (10.1016/0039-6028(94)90279-8) / Surf. Sci. by Hamza A. V. (1994)
  19. Chen D. Workman R. Sarid D. 344 23 (1995); (10.1016/0262-1762(95)90219-8)
  20. Moro L., et al., J. Appl. Phys. 81, 6141 (1997); (10.1063/1.364395) / J. Appl. Phys. by Moro L. (1997)
  21. Moro L., et al., Appl. Surf. Sci. 119, 76 (1997)]. (10.1016/S0169-4332(96)01086-0) / Appl. Surf. Sci. by Moro L. (1997)
  22. To prepare the Si specimen a <111> crystalline Si substrate was thinned by a dimple grinder from a thickness of about 450 μm to several tens of microns at the center. It was further thinned to perforation by chemical etching in a mixed solution with a ratio of HF:HNO 3 = 1:4. The thickness near the wedge-shaped perforation edge was less than several tens of nanometers. The oxide film on the Si surface was also removed by the chemical etching. To prepare Ti and Nb specimens thin foils (thickness ∼2 μm) were thinned to perforation by ion milling.
  23. The SWCNTs were produced by laser ablation of a graphite target containing 1.2 atomic % of a nickel and cobalt mixture. For a detailed description of the laser ablation method see (11) and
  24. Guo T., Nikolaev P., Thess A., Colbert D. T., Smalley R. E., Chem. Phys. Lett. 243, 49 (1995). (10.1016/0009-2614(95)00825-O) / Chem. Phys. Lett. by Guo T. (1995)
  25. Zhang Y., Iijima S., Philos. Mag. Lett. 78, 139 (1998). (10.1080/095008398178129) / Philos. Mag. Lett. by Zhang Y. (1998)
  26. Strictly speaking the Si surface as prepared will be terminated by hydrogen or covered with a few monolayers of other surface contaminants including amorphous carbon left over from the ethanol used to suspend the SWCNTs. However these would not influence the result of the experiment because the surface-terminated hydrogen desorbs at ∼500°C [
  27. Schmidt J., Hunt M. R. C., Miao P., Palmer R. E., Phys. Rev. B 56, 9918 (1997); (10.1103/PhysRevB.56.9918) / Phys. Rev. B by Schmidt J. (1997)
  28. ] and the amorphous carbon contamination on the surface of Si forms epitaxial SiC at ∼800°C [
  29. Becker J. P., Long R. G., Mahan J. E., J. Vac. Sci. Technol. A12, 174 (1994); (10.1116/1.578916) / J. Vac. Sci. Technol. by Becker J. P. (1994)
  30. Henderson R. C., Marcus R. B., Polito W. J., J. Appl. Phys. 42, 1208 (1971)]. (10.1063/1.1660168) / J. Appl. Phys. by Henderson R. C. (1971)
  31. A JEM-2000FXVII microscope with a vacuum of about 10 –9 torr was used for the heating experiments and for high-resolution microscopy.
  32. The bright spots in the SiC {220} ringlike diffraction pattern indicate a partially epitaxial growth of SiC in a relatively thick Si region. The existence of unreacted Si is also indicated in the same diffraction pattern. The splitting of Si {220} diffraction spots is due to the deformation of the Si substrate during heating.
  33. An achiral (10 10) SWCNT has a diameter close to that indicated by the experimental data. For an explanation of the chiral vector of a nanotube see (4).
  34. Bulk self-diffusion parameters for TiC and NbC can be found in G. V. Samsonov and I. M. Vinitskii Handbook of Refractory Compounds (IFI/Plenum New York 1980) pp. 222–223.
  35. Partially supported by the Special Coordination Funds of the Science and Technology Agency of the Japanese Government. E.L. acknowledges the support of L. D. Marks.
Dates
Type When
Created 23 years, 1 month ago (July 27, 2002, 5:42 a.m.)
Deposited 1 year, 7 months ago (Jan. 13, 2024, 3:57 a.m.)
Indexed 1 month ago (July 30, 2025, 8:22 p.m.)
Issued 25 years, 11 months ago (Sept. 10, 1999)
Published 25 years, 11 months ago (Sept. 10, 1999)
Published Print 25 years, 11 months ago (Sept. 10, 1999)
Funders 0

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@article{Zhang_1999, title={Heterostructures of Single-Walled Carbon Nanotubes and Carbide Nanorods}, volume={285}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.285.5434.1719}, DOI={10.1126/science.285.5434.1719}, number={5434}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Zhang, Y. and Ichihashi, T. and Landree, E. and Nihey, F. and Iijima, S.}, year={1999}, month=sep, pages={1719–1722} }