DOI: 10.1126/science.283.5409.1897. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

10.1126/science.283.5409.1897

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Epitaxial growth of single-crystal gadolinium oxide dielectric thin films on gallium arsenide is reported. The gadolinium oxide film has a cubic structure isomorphic to manganese oxide and is (110)-oriented in single domain on the (100) gallium arsenide surface. The gadolinium oxide film has a dielectric constant of approximately 10, with low leakage current densities of about 10 –9 to 10 –10 amperes per square centimeter at zero bias. Typical breakdown field is 4 megavolts per centimeter for an oxide film 185 angstroms thick and 10 megavolts per centimeter for an oxide 45 angstroms thick. Both accumulation and inversion layers were observed in the gadolinium oxide–gallium arsenide metal oxide semiconductor diodes, using capacitance-voltage measurements. The ability to grow thin single-crystal oxide films on gallium arsenide with a low interfacial density of states has great potential impact on the electronic industry of compound semiconductors.

Bibliography

Hong, M., Kwo, J., Kortan, A. R., Mannaerts, J. P., & Sergent, A. M. (1999). Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation. Science, 283(5409), 1897â1900.

Authors 5

M. Hong (first)
J. Kwo (additional)
A. R. Kortan (additional)
J. P. Mannaerts (additional)
A. M. Sergent (additional)

References 18 Referenced 395

Revesz A., Zaininger K., J. Am. Ceram. Soc. 46, 606 (1963). (10.1111/j.1151-2916.1963.tb14627.x) / J. Am. Ceram. Soc. by Revesz A. (1963)
Weinreich O., J. Appl. Phys. 37, 2924 (1966). (10.1063/1.1782162) / J. Appl. Phys. by Weinreich O. (1966)
Mimura T., Odani K., Yokoyama N., Nakayama Y., Fukuta M., IEEE Trans. Electron Devices 25, 573 (1978). (10.1109/T-ED.1978.19139) / IEEE Trans. Electron Devices by Mimura T. (1978)
Tsang W. T., Appl. Phys. Lett. 33, 429 (1978). (10.1063/1.90411) / Appl. Phys. Lett. by Tsang W. T. (1978)
C. W. Wilmsen Ed. Physics and Chemistry of III-V Compound Semiconductor Interfaces (Plenum New York 1985). (10.1007/978-1-4684-4835-1)
Hong M., et al., J. Vac. Sci. Technol. B 14, 2297 (1996). (10.1116/1.588924) / J. Vac. Sci. Technol. B by Hong M. (1996)
Passlack M., et al., IEEE Trans. Electron Devices 44, 214 (1997). (10.1109/16.557709) / IEEE Trans. Electron Devices by Passlack M. (1997)
F. Ren et al. Technical Digest of the IEEE International Electron Devices Meeting San Francisco CA 8 to 11 December 1996 (IEEE Piscataway NJ 1996) pp. 943–945.
Ren F., et al., IEEE Electron Device Lett. 19, 309 (1998). (10.1109/55.704409) / IEEE Electron Device Lett. by Ren F. (1998)
Tu L. W., Schubert E. F., Hong M., Zydzik G. J., J. Appl. Phys. 80, 6448 (1996). (10.1063/1.363664) / J. Appl. Phys. by Tu L. W. (1996)
J. Kwo et al. J. Vac. Sci. Technol. B in press.
Hong M., J. Cryst. Growth 150, 277 (1995). (10.1016/0022-0248(95)80221-W) / J. Cryst. Growth by Hong M. (1995)
Hong M., et al., J. Vac. Sci. Technol. B 16, 1395 (1998). (10.1116/1.590082) / J. Vac. Sci. Technol. B by Hong M. (1998)
Kortan A. R., Erbil A., Birgeneau R. J., Dresselhaus M. S., Phys. Rev. Lett. 47, 1206 (1981). (10.1103/PhysRevLett.47.1206) / Phys. Rev. Lett. by Kortan A. R. (1981)
Geller S., Acta Crystallogr. B 27, 821 (1971). (10.1107/S0567740871002966) / Acta Crystallogr. B by Geller S. (1971)
Nashimoto K., Fork D. K., Geballe T. H., Appl. Phys. Lett. 60, 1199 (1992). (10.1063/1.107404) / Appl. Phys. Lett. by Nashimoto K. (1992)
Y. C. Wang M. Hong J. Kwo J. P. Mannaerts unpublished results.
We would like to thank A. Y. Cho R. M. Fleming T. S. Lay C. T. Liu D. W. Murphy G. L. Timp R. B. van Dover Y. H. Wong and M. C. Wu for valuable suggestions.

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:37 a.m.)
Deposited	1 year, 7 months ago (Jan. 12, 2024, 10:06 p.m.)
Indexed	6 days, 3 hours ago (Aug. 21, 2025, 12:58 p.m.)
Issued	26 years, 5 months ago (March 19, 1999)
Published	26 years, 5 months ago (March 19, 1999)
Published Print	26 years, 5 months ago (March 19, 1999)

Funders 0

None

BibTeX

@article{Hong_1999, title={Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation}, volume={283}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.283.5409.1897}, DOI={10.1126/science.283.5409.1897}, number={5409}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Hong, M. and Kwo, J. and Kortan, A. R. and Mannaerts, J. P. and Sergent, A. M.}, year={1999}, month=mar, pages={1897–1900} }

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