DOI: 10.1126/science.281.5379.951. Making Nonmagnetic Semiconductors Ferromagnetic

Making Nonmagnetic Semiconductors Ferromagnetic

10.1126/science.281.5379.951

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

REVIEW Semiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors, a high concentration of magnetic elements can be introduced in nonmagnetic III-V semiconductors currently in use for devices. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium molecular beam epitaxial growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 kelvin. The origin of the ferromagnetic interaction is discussed. Multilayer heterostructures including resonant tunneling diodes (RTDs) have also successfully been fabricated. The magnetic coupling between two ferromagnetic (Ga,Mn)As films separated by a nonmagnetic layer indicated the critical role of the holes in the magnetic coupling. The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.

Bibliography

Ohno, H. (1998). Making Nonmagnetic Semiconductors Ferromagnetic. Science, 281(5379), 951â956.

Authors 1

H. Ohno (first)

References 36 Referenced 4,523

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10.1126/science.281.5375.407
10.1103/PhysRevLett.80.4313
Koshihara S., et al., ibid. 78, 4617 (1997). (10.1103/PhysRevLett.78.4617) / ibid. by Koshihara S. (1997)
I acknowledge F. Matsukura A. Shen N. Akiba Y. Sugawara T. Kuroiwa T. Omiya Y. Iye S. Katsumoto A. Oiwa and T. Dietl for collaboration and discussion. Partially supported by a Grant-in-Aid for Scientific Research Priority Area “Spin Controlled Semiconductor Nanostructures” (09244103) from the Ministry of Education Science Sports and Culture Japan and by the “Research for the Future” program (JSPS-RFTF97P00202) from the Japan Society for the Promotion of Science.

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:43 a.m.)
Deposited	1 year, 7 months ago (Jan. 12, 2024, 10:02 p.m.)
Indexed	2 days, 5 hours ago (Aug. 30, 2025, 1:04 p.m.)
Issued	27 years ago (Aug. 14, 1998)
Published	27 years ago (Aug. 14, 1998)
Published Print	27 years ago (Aug. 14, 1998)

Funders 0

None

BibTeX

@article{Ohno_1998, title={Making Nonmagnetic Semiconductors Ferromagnetic}, volume={281}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.281.5379.951}, DOI={10.1126/science.281.5379.951}, number={5379}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Ohno, H.}, year={1998}, month=aug, pages={951–956} }

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  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1998,
        8,
        14
      ]
    ]
  },
  "references-count": 36,
  "journal-issue": {
    "issue": "5379",
    "published-print": {
      "date-parts": [
        [
          1998,
          8,
          14
        ]
      ]
    }
  },
  "alternative-id": [
    "10.1126/science.281.5379.951"
  ],
  "URL": "http://dx.doi.org/10.1126/science.281.5379.951",
  "relation": {},
  "ISSN": [
    "0036-8075",
    "1095-9203"
  ],
  "subject": [],
  "container-title-short": "Science",
  "published": {
    "date-parts": [
      [
        1998,
        8,
        14
      ]
    ]
  }
}